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ST SMA6J20A-TR SMA6J20A
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ST(STMicroelectronics) SMA6J20A-TR
- Type
- ST
- Minimum package
- 5000
Technical parameters
- Electronic Component
- ST(STMicroelectronics)
- Electronic Component
- SMA6J20A-TR
- Electronic Component
- 1
- Package
- SMA（DO-214AC）
- Electronic Component
- Electronic Component
- Type
- TVS
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.32g
- Electronic Component
- 1
- Electronic Component
- BM0258881418
- Operating Temperature
- 55℃~+175℃
- Voltage
- 42.8V
- Electronic Component
- IEC 61000-4-2
- Current(Ir)
- 1uA
- Voltage(VBR)
- 24.5V
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SMA6J20A-TR 产品概述
一、器件简介
SMA6J20A-TR 是意法半导体（ST）的一款单向瞬态电压抑制器（TVS），封装为 SMA（DO-214AC），以卷带（TR）形式供货，适合自动贴片生产。器件用于抑制瞬态过压与静电放电（ESD）或雷击浪涌，保护敏感电子电路和接口线路。
二、主要电气参数（关键值）
- 极性：单向
- 反向工作电压 Vrwm：20 V
- 击穿电压 Vbr（典型）：24.5 V
- 钳位电压 Vclamp（Ipp 条件）：42.8 V
- 峰值脉冲电流 Ipp：93 A @ 8/20 μs
- 峰值脉冲功率 Ppp：4 kW @ 8/20 μs
- 反向漏电流 Ir：1 μA（典型）
- 工作温度范围：-55 ℃ ~ +175 ℃
- 符合 IEC 61000-4-2 静电防护等级
三、特性与优势
- 高浪涌吸收能力：在标准 8/20 μs 浪涌脉冲下可承受 93 A，峰值功率达 4 kW，适合电源与信号线的强冲击保护。
- 低漏电流与稳定击穿：Vrwm 20 V 与 Vbr 24.5 V 的组合可在较高工作电压下实现可靠保护，Ir 仅 1 μA，适合对泄漏敏感的应用。
- 宽温度范围：-55 ℃ 至 +175 ℃，适用于严格环境及工业级应用。
- 单向结构：在正向通态时表现为低阻抗，便于用于直流电源轨或单向信号保护。
四、典型应用场景
- 车载电子（依据温度与冲击需求）
- 工业自动化控制器与电源输入保护
- 通信设备与接口（如以太网供电线路、串行总线）
- 家用电器主板与测量仪器的浪涌/ESD 保护
五、布局与使用建议
- 贴片位置应尽量靠近被保护端口或连接点，以减小走线感应与串联电感。
- 对高能量浪涌，配合适当熔断器、PTC 或串联电阻共同使用，避免单器件吸收全部能量。
- 对于多线或差分信号，注意选择单向或双向 TVS 的类型以避免信号畸变。
- 焊接时遵守封装热工艺规范，避免过热影响器件特性与可靠性。
- 在设计中考虑钳位电压与被保护器件的耐压余量，确保在钳位状态下不会损伤下游电路。
六、可靠性与合规
SMA6J20A-TR 满足 IEC 61000-4-2 静电放电测试等级，额定工作温度和耐浪涌能力使其适合长期可靠运行。为保证系统级合规，建议在最终设备中进行完整的 EMI/ESD/浪涌测试与验证。
总结：SMA6J20A-TR 以其高能量吸收能力、低漏电、高温稳定性和标准 SMA 封装，为需要稳健瞬态保护的电源与信号线提供了一种经济且可靠的解决方案。在选型与布局时注意钳位电压裕量与热能管理，可显著提高系统抗干扰能力与寿命。
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