Model & package intelligence
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ST T1235T-8G-TR T1235T
Configuration
1 options
Configuration
23+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ST(STMicroelectronics) T1235T-8G-TR
- Type
- ST
- Minimum package
- 1000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ST(STMicroelectronics)
- Electronic Component
- T1235T-8G-TR
- Electronic Component
- 1
- Package
- D2PAK
- Electronic Component
- Thyristor (SCR) / Module
- Electronic Component
- 1.619g
- Electronic Component
- 1
- Electronic Component
- BM69417658
- Operating Temperature
- 40℃~+150℃
- Surge Current
- 95A
- Latching Current(Ih)
- 40mA
- Current(It)
- 12A
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
- Voltage(Vtm)
- 1.6V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
T1235T-8G-TR 产品概述
概述
T1235T-8G-TR 是一款由 STMicroelectronics（意法半导体）制造的高性能双向可控硅（SCR）。该器件设计用于高电压和高电流应用，广泛应用于工业控制、电机驱动和电力调节等领域。凭借其出色的电气特性和耐用的封装设计，T1235T-8G-TR 在各种苛刻的工作条件下都能保持稳定的性能，为系统可靠性提供保障。
主要参数
- 类型: 双向可控硅
- 电压 - 断态 (Vdr): 最大800V，适用于高电压的驱动和控制应用。
- 电流 - 通态 (It (RMS)): 最大12A，适合中流量控制。
- 电流 - 非重复浪涌 50、60Hz (Itsm): 95A（50Hz）、90A（60Hz），提供强大的瞬态承载能力，适应负载变化。
- 电压 - 栅极触发 (Vgt): 最大1.3V，确保低功耗驱动。
- 电流 - 栅极触发 (Igt): 最大35mA，当应用快速切换时，确保触发电流满足设备要求。
- 电流 - 保持 (Ih): 最大40mA，支持不同电流操作条件下的稳定闭合特性。
工作环境与封装
T1235T-8G-TR 的工作温度范围为 -40°C 至 150°C，使其能够在极端温度下可靠工作，适用于各种恶劣环境。器件采用 D2PAK 封装设计，具有优秀的散热性能和机械强度，适合表面贴装（SMD）工艺。D2PAK 封装的设计还可以提升 PCB 的组装效率，适合现代电子设备的小型化趋势。
应用领域
T1235T-8G-TR 适用于多种应用领域：
- 电机控制: 在电机驱动系统中，可以实现精确控制电流，支持启动、运行和关断过程。
- 温控电路: 可以用于电炉、温控器和其他加热设备的功率控制。
- 励磁控制: 在发电机和变压器系统中，用于调节励磁电流，实现电压的稳定。
- 电源管理: 用于整流、逆变以及可再生能源系统（如太阳能和风能）的功率转换与控制。
- 浪涌保护: 提供瞬态电流保护，避免设备在电压激增时受损。
结论
T1235T-8G-TR 作为一款双向可控硅，其优秀的电气特性、广泛的工作温度范围以及坚固的封装设计，使其成为工业控制和能源管理领域的理想选择。凭借 STMicroelectronics 的品牌背景，该器件在市场上拥有良好的可靠性和性能，能够满足现代电子设备不断升级的需求。在选择合适的可控硅元器件以实现高可靠性和高效能的系统时，T1235T-8G-TR 无疑是一个值得考虑的优质方案。
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