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ST STD13N60M2
Configuration
1 options
Configuration
22+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ST(STMicroelectronics) STD13N60M2
- Type
- ST
- Unit
- Electronic Component
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ST(STMicroelectronics)
- Electronic Component
- STD13N60M2
- Electronic Component
- 1
- Package
- DPAK
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.49g
- Electronic Component
- 1
- Electronic Component
- BM0000285597
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 110W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 600V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：STD13N60M2 MOSFET
引言
STD13N60M2是一款高性能N沟道MOSFET，专为需要高电压和高电流的应用而设计。它的主要规格包括漏源电压（Vdss）为600V，最大连续漏极电流（Id）为11A，以及高达110W的功率耗散。这些优异的性能使得STD13N60M2非常适合用于电源管理、开关电源、逆变器等各类高频开关应用中。
关键参数
- 漏源电压（Vdss）: 600V，使其适用于高电压应用。
- 连续漏极电流（Id）: 在25°C时可达到11A，此参数对于电源设计至关重要。
- 栅源极阈值电压（Vgs(th)）: 4V @ 250µA，适合低电压控制电路。
- 漏源导通电阻（Rds(on)）: 在5.5A和10V的条件下为380mΩ，提供较低的导通损耗，提高整体效率。
- 栅极电荷（Qg）: 最大值为17nC @ 10V，较低的栅极电荷可减小开关损耗。
- 输入电容（Ciss）: 在100V条件下，最大为580pF，确保快速切换速度。
工作特性
STD13N60M2工作温度范围广泛，从-55°C到150°C（TJ），这使其可以在各种环境条件下可靠运行。无论是在极端高温还是低温环境下，其性能表现都可稳定，适应各种工业应用的需要。
封装形式
该器件使用表面贴装型DPAK（TO-252-3）封装，具有良好的散热性能和集成度。DPAK封装通常适用于需要可靠性的电源和功率管理应用，减少了PCB上的空间占用，同时也便于微型化设计。
应用场合
STD13N60M2特别适合以下应用场景：
- 开关电源：在PSU（电源单元）中，用于高效的开关调节。
- 逆变器：在太阳能逆变器和UPS（不间断电源）中充当功率开关。
- 电机驱动：用于无刷直流电机和步进电机驱动电路，通过调整电流和电压控制电机转速。
- DC-DC变换器：特别是在高电压应用中，提供有效的电源转换和稳压功能。
总结
STD13N60M2是一款高质量、高效率的N沟道MOSFET，凭借其600V的高电压能力和11A的电流承载能力，成为电源管理和能量转换等领域的理想选择。其低导通电阻和适应极端温度的特性，使其在高性能应用中表现出色。此外，采用DPAK封装的STD13N60M2便利了其在现代电子设备中的整合与应用。这款MOSFET以其可靠性和高效性，具有广泛的市场应用前景，尤其是在工业自动化、可再生能源和电力电子领域。
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