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ST STN2NF10
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ST(STMicroelectronics) STN2NF10
- Type
- ST
- Unit
- Electronic Component
- Minimum package
- 4000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ST(STMicroelectronics)
- Electronic Component
- STN2NF10
- Electronic Component
- 1
- Package
- SOT-223
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.22g
- Electronic Component
- 1
- Electronic Component
- BM0000287416
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 3.3W
- Electronic Component
- Electronic Component
- Electronic Component
- 4000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
STN2NF10 产品概述
1. 产品简介
STN2NF10是一款由意法半导体（STMicroelectronics）生产的N沟道金属氧化物半导体场效应管（MOSFET），该器件设计用于高效的电源管理、开关电路及其他需要高电压和电流处理的应用。STN2NF10具有优越的电气性能和高可靠性，封装为SOT-223型，适合于表面贴装技术（SMT），具有良好的热管理性能。
2. 主要参数
- 漏源电压（Vds）: 100V，这意味着其能够承受高达100伏的漏极到源极的电压，是许多中等功率窗口应用的理想选择。
- 连续漏极电流（Id）: 2.4A（在25°C时），提供足够的电流容量，支持多种电源供应和负载驱动场合。
- 导通电阻（Rds(on)）: 在1.2A和10V的条件下为260毫欧，这使得在开关时能有效降低功率损耗，达到较高的能效。
- 阈值电压（Vgs(th)）: 4V（在250µA时），提供稳定的开关控制，适合逻辑电平转换应用。
- 最大功率耗散: 3.3W（在25°C时），这个参数强调了干扰和过热的防护能力，确保器件在高负载下稳定工作。
3. 应用场景
STN2NF10因其优异的电气特性，广泛用于各种电气和电子应用中，具体包括但不限于：
- 开关电源（SMPS）: 在AC-DC和DC-DC转换中作为开关元件，能够有效管理电力。
- 电机驱动: 可用于直流电机控制及步进电机驱动，提供精确的控制方案。
- LED驱动电路: 控制高电流LED照明应用中的电流流动，确保工作温度和亮度表现稳定。
- 功率管理电路: 在无刷电机、逆变器等多种应用中，进行高效能量转换和管理。
4. 设计优势
- 宽工作温度范围: 该器件可以在-55°C到150°C的环境下运行，适合于恶劣环境及高温应用，其可靠性在多种条件下均得到了验证。
- 小型化和高效能: SOT-223封装不仅节省空间，还能够提供出色的散热能力，保证在高功率下的稳定性。
- 易于驱动和控制: 随着市场对快速切换和高频操作需求的增加，STN2NF10具备快速开关特性，尤其是在高频开关电源中的应对能力，能够显著提升整体电路效率。
5. 封装细节
STN2NF10采用SOT-223封装，这是一种流行的表面贴装式封装，适合自动化生产和高密度电路板设计。其结构设计有效减少了占板面积，提高了PCB布线的灵活性。
6. 总结
STN2NF10以其100V的高漏源电压、2.4A的连续漏极电流、260毫欧的导通电阻和3.3W的功率耗散能力，成为了一款在电源管理及各种开关应用中不可或缺的N沟道MOSFET。它的设计和性能使得用户能够在多种电气环境下使用，确保了设备的高效能和长久的可靠性，是现代电子设计中理想的解决方案。
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