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ST STN1NF20
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ST(STMicroelectronics) STN1NF20
- Type
- ST
- Minimum package
- 4000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ST(STMicroelectronics)
- Electronic Component
- STN1NF20
- Electronic Component
- 1
- Package
- SOT-223
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.57g
- Electronic Component
- 1
- Electronic Component
- BM0258813119
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 2W
- Electronic Component
- Electronic Component
- Electronic Component
- 4000
- Voltage(Vdss)
- 200V
- Gate (Qg)
- 5.7nC@10V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
STN1NF20 产品概述
一、产品简介
STN1NF20 是意法半导体（ST）推出的一款高压 N 沟道场效应晶体管，采用 SOT-223-3 小功率封装。器件耐压可达 200V，适合在需要高耐压但电流需求较小的开关与线性应用中使用。其设计在兼顾耐压与封装散热能力的同时，提供简洁的外形与便于 PCB 安装的热性能。
二、主要参数
- 漏源电压 Vdss：200V
- 连续漏极电流 Id：1A
- 导通电阻 RDS(on)：1.1Ω（Vgs=10V，Id=500mA）
- 最大耗散功率 Pd：2W（SOT-223，良好 PCB 散热条件下）
- 阈值电压 Vgs(th)：4V（典型值）
- 总栅极电荷 Qg：5.7nC（Vgs=10V）
- 反向传输电容 Crss：4pF（Vds=25V）
- 工作结温范围：-55℃ ~ +150℃（Tj）
以上参数在典型工作条件下适用，具体电气特性请参考器件数据手册并按应用场景进行裕量设计。
三、封装与热特性
SOT-223-3 封装提供比 SOT-23 更好的功率耗散能力，适合需要有限散热且空间受限的应用。标称 Pd 为 2W，但实际可耗散功率受 PCB 铜箔面积、散热层和环境温度影响较大。建议在 PCB 设计中增大散热铜箔面积并采用多层接地/散热层以降低结-环境温差，确保长期可靠工作。
四、典型应用场景
- 离线开关电源的初级侧或辅助功率开关
- 小功率高压开关与保护电路（如过压/欠压保护）
- 线性稳压器或高压开关元件
- 小电流感应负载驱动、电流检测或取样电路
由于 RDS(on) 在 Vgs=10V 条件下仍为较高值，适合低频或间歇性开关场合，且要求耐压高于一般逻辑 MOSFET 的场合。
五、设计与使用建议
- 栅极驱动：器件阈值电压约 4V，建议驱动电压接近 10V 以获得声明的 RDS(on)；若仅由 5V 或 MCU 直接驱动，应评估导通电阻增大带来的功耗和发热。
- 开关速度与损耗：Qg=5.7nC、Crss=4pF，栅极电荷适中，频率较高时栅极驱动损耗和开关损耗会显著上升，应评估驱动能力并考虑驱动缓冲或采用更低 Qg 器件。
- 感性负载保护：在驱动电感性负载时，推荐加入续流或吸收电路（如二极管、RC、TVS 等）以抑制回灌瞬态并保护器件。
- 热管理：在高环境温或连续导通工况下，应进行结温计算并适当降额使用，必要时加大铜箔面积或采用散热结构。
六、选型注意事项
在选型时请确认工作电压、平均与峰值电流、开关频率及热环境，并考虑器件的 RDS(on) 对系统效率和发热的影响。若需要更低导通损耗或更高开关性能，可在 ST 系列中选择低 RDS(on) 或低 Qg 的替代型号。购买与设计量产前，强烈建议参考 ST 官方数据手册及封装文档，并进行样机测试验证。
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