WMSIC Electronic Components

Sunlord UPZ2012D101-4R0TF UPZ2012D101

ModelUPZ2012D101-4R0TF
Package0805
BrandSUNLORD
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Sunlord UPZ2012D101-4R0TF
Type
SUNLORD
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SUNLORD
Electronic Component
UPZ2012D101-4R0TF
Electronic Component
1
Package
0805
Electronic Component
Ferrite Bead
Electronic Component
±25%
Electronic Component
0.037g
Electronic Component
1
Channel Count
1
Electronic Component
BM0257715530
Operating Temperature
55℃~+125℃
Current
4A
@Frequency
100Ω@100MHz
Resistor(DCR)
120mΩ
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

UPZ2012D101-4R0TF 产品概述

一、产品简介

UPZ2012D101-4R0TF 为 Sunlord(顺络)系列的功率磁珠(磁性滤波元件),常用于电源与信号线的高频干扰抑制。典型标称阻抗为 100Ω @ 100MHz,允许误差 ±25%,直流电阻 (DCR) 约 120mΩ,额定通过电流 4A,工作温度范围 -55℃ 至 +125℃。器件为单通道结构,适配 2012(0805)贴片封装,体积小、适合高密度电路板布局。

二、主要电气参数

  • 阻抗:100Ω @ 100MHz,容许偏差 ±25%(标称值)
  • 直流电阻(DCR):约 120mΩ(典型)
  • 额定电流:4A(连续)
  • 通道数:1(单通道)
  • 工作温度:-55℃ ~ +125℃

注:阻抗为交流特性,受频率、直流偏置电流与温度影响;DCR 为在常温下的典型测量值。

三、关键特性与优势

  • 高频抑制效果明显:在 100MHz 附近提供较高阻抗,有效衰减射频噪声和共模/差模干扰。
  • 低电阻损耗:120mΩ 左右的 DCR 保持较低功耗,适合需要大电流传输的电源轨。
  • 高电流能力:4A 额定电流使其可用于 DC-DC 输出、供电母线、USB 电源等场景。
  • 小型贴片封装(2012/0805):节省 PCB 面积,便于自动化贴装与回流焊接。

四、典型应用场景

  • 开关电源输出滤波(DC-DC converter 输出)
  • 手机、平板、笔记本等便携设备的电源干扰抑制
  • USB/Type-C 电源线与充电线路
  • 模块电源输入滤波、摄像头/无线模块电源去耦
  • EMI/EMC 设计中作为局部滤波元件使用

五、封装与安装建议

  • 封装:2012(0805)贴片尺寸,建议按制造商推荐的 PCB 焊盘图进行布局。
  • 焊接:遵循顺络的回流焊温度曲线或通用的 SMT 回流规范(注意不超过器件耐受温度)。
  • 布局:将磁珠尽量靠近噪声源或进入/离开敏感电路的输入端,短回路路径以提高滤波效率。避免与大面积铜箔并联产生寄生影响。

六、选型与使用注意事项

  • 直流偏置影响:较高的直流通过会改变磁珠材料特性,可能降低高频阻抗,实际使用时需验证在工作电流下的阻抗保持情况。
  • 热升与功耗:连续大电流会带来发热,须评估 PCB 散热条件及周边元件耐温。
  • 封装兼容性:若装配流程或空间限制与 2012 不符,应确认替代封装的电气特性一致。
  • 测试验证:在目标系统中进行 EMI 测试与热测试,确保满足系统级要求。

七、总结

UPZ2012D101-4R0TF 以 100Ω@100MHz 的高频阻抗、较低 DCR 与 4A 的电流承载能力,适合电源线与敏感信号线的高频干扰抑制。选型时应结合目标电流、工作温度及 PCB 布局进行验证,必要时与厂商获取详细阻抗曲线与焊接工艺建议,以确保在实际应用中的性能与可靠性。

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