WMSIC Electronic Components

Sunlord MWSD1005C2N0ST

ModelMWSD1005C2N0ST
Package0402
BrandSUNLORD
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

18 specifications

Core information

Product name
Sunlord MWSD1005C2N0ST
Type
SUNLORD
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SUNLORD
Electronic Component
MWSD1005C2N0ST
Electronic Component
1
Package
0402
Type
Inductor
Electronic Component
Power Inductor
Electronic Component
0.019g
Inductor
2nH
Electronic Component
1
Electronic Component
BM0265148819
Current
950mA
Resistor(DCR)
43mΩ
Electronic Component
Electronic Component
Electronic Component
10000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

Sunlord MWSD1005C2N0ST 绕线片式电感产品概述

一、产品基本属性

MWSD1005C2N0ST是顺络电子(Sunlord)推出的高频绕线片式电感,属于公司射频电感核心产品线。型号标识清晰对应产品特性:

  • MWSD:顺络绕线片式电感系列代号;
  • 1005:公制封装尺寸(1.0mm×0.5mm,对应英制0402);
  • 2N0:标称电感值2nH;
  • ST:小封装高频绕线设计后缀。

该产品专为小型化、高频化电子设备打造,兼容主流表面贴装工艺,是移动通信、无线连接等领域的标准化器件。

二、核心性能参数

2.1 电感特性

标称电感值2nH,公差±0.3nH,满足射频电路对电感精度的要求。采用顺络自研铁氧体磁芯,电感值温漂系数约±0.2nH/100℃,在-40℃至+125℃工作温度范围内稳定性优异。

2.2 电流承载能力

额定直流电流(IDC)950mA,定义为“电感值随直流电流增加下降不超过30%时的最大电流”。该电流值可覆盖中低功率射频模块(如蓝牙5.0、WiFi 6e发射前端)的电流需求,无需额外并联电感。

2.3 直流电阻(DCR)

仅43mΩ,远低于同封装叠层电感(常规叠层2nH电感DCR约60-80mΩ)。950mA工作电流下功率损耗约0.039W,可有效降低电路热损耗,提升效率。

2.4 高频特性

绕线工艺搭配低寄生电容设计,在1-6GHz频段保持高Q值(品质因数),适合射频匹配、滤波等对能量损耗敏感的场景(如LNA输入/输出端)。

三、封装与工艺特点

3.1 0402小封装设计

封装尺寸1.0mm×0.5mm×0.5mm(长×宽×高),体积仅为0603封装的1/4,可显著节省PCB空间,适配智能手机、智能穿戴等小型化设备的高密度布局。

3.2 精密绕线工艺

采用多层紧密绕线技术,相比叠层电感:

  • 小电感值下Q值更高(1GHz时Q值约20-25);
  • 寄生电容更低(<0.05pF),避免高频信号串扰;
  • 电感值一致性更好,批量生产公差控制稳定。

3.3 可靠性设计

  • 磁芯材料耐高温、抗老化,满足车载电子(AEC-Q200可选)、工业级应用;
  • 焊端采用镍钯金镀层,兼容无铅回流焊,焊接强度符合IPC标准(拉脱力≥1N);
  • 经过振动(10-2000Hz,1.5G)、温度循环(-40℃→+125℃,1000次)等可靠性测试。

四、典型应用场景

MWSD1005C2N0ST的性能适配多类高频电路:

  1. 移动通信终端:手机、平板的射频前端(RF Front-End),用于天线匹配、LNA输入/输出匹配、PA偏置滤波;
  2. 无线连接模块:蓝牙5.0/5.1、WiFi 6/6e、ZigBee模块的信号滤波与阻抗匹配;
  3. 物联网设备:智能穿戴(手表、手环)、智能家居传感器的射频电路;
  4. 高速数字电路:服务器、路由器的PCIe/USB 3.0链路去耦滤波,降低信号串扰。

五、选型与使用注意事项

5.1 选型参考

  • 若需更大电流(1.5A+),可选同系列0603封装(如MWSD1608C2N0ST);
  • 若电感值需求不同,可参考MWSD系列其他型号(2.2nH、3.3nH等)。

5.2 焊接要求

  • 回流焊需符合JEDEC J-STD-020标准,峰值温度≤245℃,回流时间≤40秒;
  • 手工焊接需控制烙铁温度<350℃、焊接时间<3秒,避免磁芯过热损坏。

5.3 存储条件

存储于常温(15-35℃)、干燥(相对湿度<60%)环境,开封后未使用需密封保存,防止焊端氧化。

该产品凭借小封装、高Q值、低损耗的特点,成为射频电路设计中2nH电感的主流选型之一,广泛应用于消费电子、物联网等领域。

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