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Sunlord MWSD1005C4N9STM01
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
18
specifications
Core information
- Product name
- Sunlord MWSD1005C4N9STM01
- Type
- SUNLORD
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SUNLORD
- Electronic Component
- MWSD1005C4N9STM01
- Electronic Component
- 1
- Package
- 0402
- Type
- Inductor
- Electronic Component
- SMD Inductor
- Electronic Component
- 0.019g
- Inductor
- 4.9nH
- Electronic Component
- 1
- Electronic Component
- BM0264536396
- Current
- 600mA
- Resistor(DCR)
- 120mΩ
- Electronic Component
- Electronic Component
- Electronic Component
- 10000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MWSD1005C4N9STM01 产品概述
一、核心参数
- 电感值：4.9 nH
- 额定电流：600 mA（直流最大承载电流）
- 直流电阻（DCR）：120 mΩ
- 类型：绕线片式电感（线绕型 SMD）
- 封装规格：0402（业界对应 1005 公制尺寸）
- 品牌：Sunlord（顺络）
二、结构与性能特点
MWSD1005C4N9STM01 为小尺寸线绕片式电感，采用细导线多匝绕制并封装成 0402 贴片体积。与多层片式电感相比，绕线结构在低电感值下仍能保持较好的Q值与自谐频率特性，但由于线径与绕组存在电阻，DCR 值相对较高（本品为 120 mΩ），在通过较大直流偏置时会产生一定的功耗与温升。600 mA 的额定电流对小封装来说属于中等负载能力，适合对电流有一定要求但受限于空间的应用场景。
三、典型应用场景
- 射频匹配与耦合网络：微亨级电感常用于 GHz 级别匹配网络与滤波组件。
- 高频去耦与阻抗控制：在高速信号线或通信模块输入处用于抑制共模/差模干扰。
- EMI/RFI 抑制：作为线路滤波与阻抗元件，配合电容构成紧凑滤波单元。
- 功率/信号端口的阻抗调节：适用于射频前端、天线匹配或射频开关周边。
四、选型与布局建议
- DCR 与功耗：120 mΩ 的直流电阻在高电流或长时间工作下会带来较大损耗，选型时应评估温升与效率影响。
- 直流偏置与电感压降：绕线电感在直流偏置下电感值可能下降，设计时需考虑实际工作点下的有效电感。
- 封装与贴装：0402 尺寸便于高密度布线，但焊点与热循环应严格按供应商回流曲线控制，避免机械应力导致破损。
- 布局：尽量缩短信号路径，靠近源点或滤波节点放置，必要时配合地平面及旁路电容形成良好回路，减少辐射与寄生耦合。
五、选购与可靠性提示
订购前建议索取并核对完整数据手册，关注自谐频率（SRF）、温度特性、包装形式及测试条件。对于量产项目，建议向顺络确认样片并做实际电路测试（温升、频响、S 参数等），同时检查是否满足环保与可靠性要求（如 RoHS、AEC-Q 等，若项目需要请与厂商确认）。
如需更详细的频率响应、温度漂移或封装图纸，我可以协助整理并建议针对性的测试项。
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