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Sunlord PZ2012D121-2R0TF PZ2012D121
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Sunlord PZ2012D121-2R0TF
- Type
- SUNLORD
- Minimum package
- 4000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SUNLORD
- Electronic Component
- PZ2012D121-2R0TF
- Electronic Component
- 1
- Package
- 805
- Electronic Component
- Ferrite Bead
- Electronic Component
- ±25%
- Electronic Component
- 0.037g
- Electronic Component
- 1
- Channel Count
- 1
- Electronic Component
- BM0264526856
- Operating Temperature
- 55℃~+125℃
- Current
- 2A
- @Frequency
- 120Ω@100MHz
- Resistor(DCR)
- 60mΩ
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
PZ2012D121-2R0TF 产品概述
一、产品简介
PZ2012D121-2R0TF 为顺络（Sunlord）生产的一款贴片磁珠（Chip Bead），封装尺寸为 0805（805）。该器件为单通道磁珠，设计用于对电源线与信号线的高频干扰抑制，在 100MHz 时阻抗为 120Ω，适合常见的 EMI/EMC 抗扰设计与滤波应用。
二、主要特性
- 阻抗：120Ω @ 100MHz（典型值）
- 阻抗误差：±25%
- 直流电阻（DCR）：60mΩ，直流损耗小
- 额定电流：2A，适用于中等电流供电线路
- 通道数：1（单通道磁珠）
- 工作温度范围：-55℃ ~ +125℃
- 封装：0805，适配常见表贴工艺
三、电气性能与作用
该磁珠在高频区呈现较高阻抗，可有效吸收并衰减传导或辐射型的高频噪声，常用于电源入/出口处、去耦网络以及信号线的共模/差模干扰抑制。60mΩ 的低 DCR 保证在额定电流下产生的压降和发热有限，适合功率与数字系统。
四、典型应用场景
- 手机、平板与便携式设备的电源滤波
- USB、HDMI 等高速接口的噪声控制
- 电源管理模块（PMIC）输入/输出滤波
- 通信设备、消费类电子与工业控制中的 EMI 抑制
五、封装与使用建议
- 建议采用标准 0805 焊盘布局并配合推荐回流焊温度曲线，避免过高温度或长时间加热导致性能退化。
- 布线时将磁珠置于噪声源与敏感电路之间，尽量靠近噪声源或接口端。
- 对于长时间高电流或高温环境，留有一定余量（选型时考虑额定电流裕度）；若电流显著高于 2A，应选用更大封装或更低 DCR 的器件。
- 使用时注意焊接应力与机械应力，避免裸露端子被弯折或受到冲击。
六、选型提示
若需要在更宽频带或更高阻抗下抑制噪声，可参考顺络同系列不同阻抗等级的磁珠；在关注功率损耗和温升时，优先考虑更低 DCR 和更高额定电流的封装。最终选型应结合电路频谱特性、允许压降与热预算共同评估。
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