WMSIC Electronic Components

Sunlord GZ2012U121TF

ModelGZ2012U121TF
Package0805
BrandSUNLORD
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Sunlord GZ2012U121TF
Type
SUNLORD
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SUNLORD
Electronic Component
GZ2012U121TF
Electronic Component
1
Package
0805
Electronic Component
Ferrite Bead
Electronic Component
±25%
Electronic Component
0.037g
Electronic Component
1
Channel Count
1
Electronic Component
BM0227508956
Operating Temperature
55℃~+125℃
Current
800mA
@Frequency
120Ω@100MHz
Resistor(DCR)
150mΩ
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

Sunlord GZ2012U121TF 片式磁珠产品概述

一、产品定位与核心价值

Sunlord(顺络)GZ2012U121TF是一款0805封装的高频EMI抑制片式磁珠,专为小型化电子设备的电磁干扰(EMI)滤波设计,核心价值在于在保证宽温适应性的前提下,实现高频噪声抑制与低直流损耗的平衡,适配消费电子、工业控制、汽车电子等多领域的中小功率电路需求。

二、核心电气参数详解

磁珠的性能核心取决于高频阻抗、直流损耗、电流承载能力三大维度,GZ2012U121TF的参数针对性极强:

1. 高频阻抗特性

阻抗规格为 120Ω@100MHz,误差±25%——100MHz是电子设备中开关电源、射频电路的典型干扰频段(如手机快充的开关噪声、路由器的杂波干扰),120Ω的阻抗值可有效衰减该频段的电磁噪声,避免干扰设备正常工作;±25%的误差范围符合工业级被动元件的常规精度要求,一致性可靠。

2. 直流电阻(DCR)

直流电阻仅 150mΩ——磁珠串接在电路中时,DCR直接影响直流压降与功率损耗。150mΩ的低阻值可显著减少发热(如5V/800mA电路中,压降仅0.12V,损耗0.096W),尤其适合对效率敏感的电源线路(如智能手机充电电路、小型单片机供电)。

3. 额定电流与温宽

  • 额定电流:800mA——保证性能稳定的最大直流电流,适配中小功率电路(如LED驱动、传感器供电);
  • 工作温度:-55℃~+125℃——宽温范围覆盖工业现场(如低温车间、高温控制柜)、车载环境(如发动机舱附近),无需额外降额设计。

4. 通道与封装

单通道设计(1个独立磁珠单元),封装为0805(英制)/2012(公制)——尺寸仅2.0mm×1.2mm,支持高密度表面贴装,符合现代电子设备“小型化、轻薄化”趋势(如智能手表、蓝牙耳机的PCB布局)。

三、封装与可靠性设计

顺络依托成熟的多层片式磁珠制造工艺,确保GZ2012U121TF的可靠性:

  • 封装工艺:采用高温烧结的陶瓷基体+银电极结构,焊接兼容性强(适配无铅回流焊,焊接温度峰值260℃/10s);
  • 环保合规:符合RoHS 2.0、无卤标准,满足全球电子设备的环保要求;
  • 可靠性测试:通过温循(-55℃~125℃,500循环)、湿度测试(85℃/85%RH,1000h),性能衰减率<5%,长期稳定性可靠。

四、典型应用场景

结合参数特性,GZ2012U121TF的核心应用场景包括:

  1. 消费电子:智能手机/平板的USB充电线路滤波(抑制快充开关噪声)、蓝牙耳机的射频信号滤波(减少杂波干扰);
  2. 工业控制:PLC的I/O接口滤波(避免电磁干扰导致的误动作)、传感器供电线路滤波(稳定信号传输);
  3. 汽车电子:仪表盘背光电路滤波(宽温适应车载环境)、车载USB充电接口滤波(抑制噪声);
  4. 通信设备:路由器/交换机的电源滤波(减少串扰)、Wi-Fi模块的信号滤波(提升传输稳定性)。

五、选型与使用注意事项

  1. 阻抗匹配:若实际干扰频段偏离100MHz(如<50MHz或>200MHz),需参考顺络对应频段的阻抗曲线(如GZ2012U100TF的阻抗峰值在50MHz);
  2. 电流降额:若电路环境温度超过100℃,建议将额定电流降额至600mA以内,避免磁珠饱和;
  3. 封装适配:0805封装适用于常规贴装设备,若需更大电流(如>1A),可选择1206或更大封装型号;
  4. 布局建议:磁珠应尽可能靠近干扰源(如开关电源输出端)或敏感电路输入端,减少干扰路径长度。

总结

Sunlord GZ2012U121TF是一款高性价比的宽温EMI抑制磁珠,以“120Ω@100MHz高频阻抗+150mΩ低DCR+0805小封装”为核心优势,覆盖多领域中小功率电路的噪声抑制需求,是消费电子、工业控制等场景的可靠选型。

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