WMSIC Electronic Components

Sunlord GZ1608E102CTF

ModelGZ1608E102CTF
Package0603
BrandSUNLORD
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Sunlord GZ1608E102CTF
Type
SUNLORD
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SUNLORD
Electronic Component
GZ1608E102CTF
Electronic Component
1
Package
0603
Electronic Component
Ferrite Bead
Electronic Component
±25%
Electronic Component
0.027g
Electronic Component
1
Channel Count
1
Electronic Component
BM0258490582
Operating Temperature
55℃~+125℃
Current
400mA
@Frequency
1kΩ@100MHz
Resistor(DCR)
500mΩ
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

GZ1608E102CTF 产品概述

GZ1608E102CTF 是顺络(Sunlord)系列的贴片磁珠器件,额定用于抑制高频电磁干扰(EMI)与射频噪声。器件基于铁氧体材料,针对快切换电路和高速通信线路提供在高频段的阻抗提升,同时保持较低的直流电阻,适合对噪声抑制要求高但载流量有限的电源或信号线应用。

一、主要参数一览

  • 型号:GZ1608E102CTF(顺络)
  • 阻抗:1 kΩ @ 100 MHz(典型)
  • 阻抗公差:±25%
  • 直流电阻(DCR):≈500 mΩ
  • 额定电流:400 mA
  • 通道数:1(单通道/单端)
  • 工作温度:-55 ℃ ~ +125 ℃
  • 封装:1608(对应常见的 0603 英制封装)
  • 功能:高频噪声抑制、EMI 抑制、射频滤波

二、性能与机理

  • 磁珠的阻抗随频率变化:在低频时表现为低阻抗(对直流影响小),而在高频(如 100 MHz)表现为高阻抗,以耗散或反射形式抑制噪声能量。
  • 在 100 MHz 附近阻抗约为 1 kΩ,能有效衰减射频噪声源对系统的干扰。
  • 直流电阻较小(约 0.5 Ω),保证在额定电流下电压降与功耗较低,适合对电压降敏感的电源轨或信号线。

三、典型应用场景

  • 电源线高频干扰抑制:用于消费电子、通信设备中对 1A 以下电源轨的高频噪声抑制(适合小电流 LDO 输出、射频模块供电滤波)。
  • 信号线滤波:USB、I2C、SPI、摄像头/射频接口等高速信号线上用于抑制共模/差模高频干扰(注意电流与信号完整性要求)。
  • PCB 屏蔽与局部滤波:靠近噪声源(如 MCU、开关电源开关节点)放置以减少 EMI 传播。
  • 移动终端与物联网设备:对尺寸和封装有限制的便携设备,0603 尺寸便于高密度布板。

四、封装与安装建议

  • 封装为 1608(0603),适合自动贴装工艺。推荐按照顺络提供或行业通用的 0603 焊盘尺寸设计 PCB。
  • 布局建议:尽量靠近噪声源或器件电源引脚放置,减少走线长度;与旁路电容配合形成 π 型或 LC 低通滤波结构可进一步提高滤除效果。
  • 流程建议:遵循顺络或元件供应商的回流焊工艺要求,避免超温或长时间高温致器件性能退化。对于含铅替代与无铅回流,按厂方推荐曲线执行。

五、选型与使用注意事项

  • 电流裕量:不要长期在额定电流上满载运行,建议在 60%~80% 额定电流范围内使用以延长可靠性(具体依据实际环境散热情况调整)。
  • 温度与环境:工作温度范围宽,但在高温环境中阻抗与材质特性可能随之变化,需验证实际系统下的噪声抑制效果。
  • 信号完整性:对于高速差分信号或高带宽信号线,磁珠会引入频率相关阻抗,可能影响信号完整性;在此类应用中需借助仿真/示波器测试评估。
  • 多级滤波:单一磁珠对极高频噪声有效,但对低频纹波和开关频率及其倍频可能不足,建议与电容或电感组合使用实现宽带抑制。

六、测试与验证

  • 阻抗测量:使用阻抗分析仪或网络分析仪在 100 MHz 测量阻抗并与规格对比。
  • 直流电阻测量:用毫欧表测量 DCR,验证是否满足系统允许的压降。
  • 散热与温升测试:在实际电流负载下评估温升,验证工作温度是否在安全范围内。
  • EMI 测试:在系统一级进行场强/传导干扰测试,确认器件放置与组合方案的实际抑制效果。

七、可靠性与失效模式

  • 常见失效包括机械裂纹(焊接或应力过大)、热损伤导致磁性材料退磁或阻抗下降、长期高温/过流导致性能漂移。
  • 储存与搬运应避免剧烈振动与湿度极端环境,遵循元件包装与防潮处理规范。

总结:GZ1608E102CTF 以其 1 kΩ@100MHz 的高频阻抗、较低的 DCR 与小型 0603 封装,适合在对高频噪声抑制有较高要求但电流不大的场合使用。选型时需结合系统电流、频谱特性和信号完整性要求进行综合评估,并按制造商推荐工艺安装与测试以确保长期可靠性。若需更详尽的回流曲线、阻抗频率曲线或封装图纸,建议直接参考顺络官方数据手册或咨询供应商。

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