WMSIC Electronic Components

Sunlord PZ2012D121-2R5TF PZ2012D121

ModelPZ2012D121-2R5TF
Package0805
BrandSUNLORD
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Sunlord PZ2012D121-2R5TF
Type
SUNLORD
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SUNLORD
Electronic Component
PZ2012D121-2R5TF
Electronic Component
1
Package
0805
Electronic Component
Ferrite Bead
Electronic Component
±25%
Electronic Component
0.037g
Electronic Component
1
Channel Count
1
Electronic Component
BM0259718958
Operating Temperature
55℃~+125℃
Current
2.5A
@Frequency
120Ω@100MHz
Resistor(DCR)
60mΩ
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

PZ2012D121-2R5TF 产品概述

一、基本参数概述

PZ2012D121-2R5TF 为顺络(Sunlord)系列单通道贴片磁珠,标称阻抗 120Ω(测量频点 100MHz),阻抗容差 ±25%,直流电阻(DCR)约 60mΩ,额定通过电流 2.5A,工作温度范围 -55℃ 至 +125℃。适用于中高频段电源与信号线的干扰抑制与射频噪声滤除。

二、结构与封装

该型号为表面贴装磁珠,常见封装尺寸为 2012(等同于 0805 英制),为单通道(单线)器件。磁珠通过铁氧体材料在高频下提供阻抗,体积小、焊接方便,适合自动贴装与回流工艺。实际外形尺寸与材料配方请以厂商数据表为准。

三、电气特性详解

  • 阻抗:120Ω@100MHz 表示在 100MHz 时的复阻抗幅值,主要反映器件对该频段噪声的抑制能力;阻抗由电阻性与感抗/容抗组成,频率变化时性能也会变化。
  • 误差 ±25%:实际阻抗值存在公差,设计时需预留裕量,可能在约 90Ω–150Ω 范围内波动。
  • DCR 60mΩ:低直流电阻有利于减少稳态压降与发热,适合需要较大直流电流的电源线应用。
  • 额定电流 2.5A:为器件在不引起过度温升或阻抗退化情况下的连续允许电流,超出时可能导致温升增大、材料特性变化或阻抗下降。

四、典型应用场景

  • 电源滤波:输入电源、负载供电线上抑制开关电源的高频干扰。
  • 信号线抗干扰:高速差分对之外的单端信号、时钟线的共模/差模噪声治理(注意匹配与阻抗影响)。
  • EMI 抑制:作为局部低成本的 EMI 解决方案,配合电容形成 PI 或 LC 网络提高滤波效果。
    适合移动设备、通信设备、消费电子与汽车电子等领域(在汽车级应用时应确认认证与温度/振动指标)。

五、PCB 布局与使用建议

  • 串联布置:磁珠通常串联在噪声源与系统输入之间,靠近噪声源放置可提高抑制效果。
  • 最小化回流路径:尽量缩短磁珠两端走线长度与回流环路,减少寄生电感。
  • 热管理:长时间大电流运行时注意周围器件散热,必要时降低额定电流使用裕量或选更大封装。
  • 焊接工艺:支持常规回流焊,遵循厂商推荐的温度曲线与焊膏量,避免过热造成性能变化。

六、测试与验收要点

  • 使用合适频段的阻抗分析仪(如网络分析仪或LCR在高频)测量 100MHz 阻抗,验证在 ±25% 范围内。
  • 用四端法毫欧计测量 DCR(约 60mΩ)并验证在容差内。
  • 温升测试:在额定电流 2.5A 下确认温升与阻抗变化,确保符合系统可靠性要求。

七、选型与替代注意

选择时关注频率特性曲线(阻抗随频率变化)、额定电流与温度特性。如需更高电流或更大阻抗,可选择较大封装或不同材料配方的同系列产品。最终选型以实际电路噪声频段与电流需求为准。

备注:本文基于所给基础参数整理,封装尺寸(2012/0805)与更详细特性请以顺络官方 datasheet 为准。

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