WMSIC Electronic Components

SGMICRO SGM8542XS/TR SGM8542XS

ModelSGM8542XS/TR
PackageSOIC-8
BrandSGMICRO
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
SGMICRO SGM8542XS / TR
Type
SGMICRO
Minimum package
4000

Technical parameters

Electronic Component
SGMICRO
Electronic Component
SGM8542XS/TR
Electronic Component
1
Package
SOIC-8
Electronic Component
Operational Amplifier
Electronic Component
0.175g
Electronic Component
1
Electronic Component
Output
Features
Built-in
Electronic Component
BM0227243981
Operating Temperature
40℃~+125℃
Amplifier
2
Output Current
85mA
(SR)
520V/ms
Power Supply Voltage
2.1V~5.5V
Static Current(Iq)
89uA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SGM8542XS/TR — 低功耗轨到轨双路运算放大器产品概述

一、产品简介

SGM8542XS/TR 是圣邦微(SGMICRO)推出的一款双路运算放大器,面向便携式与低功耗精密信号调理场景。该器件支持轨到轨输入与轨到轨输出,单电源工作电压范围宽(2.1V~5.5V),在低功耗条件下仍能提供较大的输出驱动能力,适用于对输入偏置、电流噪声和温漂有严格要求的系统。

二、主要性能参数(要点)

  • 放大器数量:双路
  • 单电源工作范围:2.1V ~ 5.5V(最大电源差 5.5V)
  • 轨到轨:输入与输出均为轨到轨结构
  • 增益带宽积(GBP):1.1 MHz
  • 压摆率(SR):520 V/ms(即约 0.52 V/μs)
  • 输入失调电压(Vos):典型 3.5 mV,温漂 2.7 μV/℃
  • 输入偏置电流(Ib):约 0.5 pA(极低)
  • 输入失调电流(Ios):约 0.5 pA
  • 噪声密度(eN):27 nV/√Hz(@1 kHz)
  • 共模抑制比(CMRR):71 dB
  • 静态电流(Iq):约 89 μA(器件静态电流)
  • 输出电流:85 mA(峰值驱动能力)
  • 工作温度范围:-40 ℃ ~ +125 ℃
  • 封装:SOIC-8
  • 型号:SGM8542XS/TR(带卷带包装)

三、技术优势解析

  • 低电源电压与轨到轨特性:支持2.1V起供电,可直接与电池系统或低压微控制器接口连接。轨到轨输入/输出保证在接近电源轨时仍维持增益精度,有利于最大化信号动态范围。
  • 极低输入偏置与失调电流:0.5 pA 级别的输入偏置/失调电流使其非常适合高阻抗传感器(例如电化学、电容式或高阻抗电极)与精密电压测量场景。
  • 低噪声与稳态精度:27 nV/√Hz 的噪声密度配合 3.5 mV 的低输入失调与 2.7 μV/℃ 的温漂,有助于在低频及直流信号链中实现高精度测量。
  • 较强输出驱动能力:85 mA 的输出电流允许驱动较低阻抗负载或作为驱动后级的小信号放大器,但仍需注意热量与功耗管理。
  • 低功耗:器件静态电流约 89 μA,适合电池供电系统与能耗敏感应用。

四、典型应用场景

  • 便携式数据采集与传感器前端(温度、湿度、气体、电化学传感器)
  • 精密缓冲器与电压跟随器,用于 ADC 驱动与抗干扰前置
  • 低频有源滤波(低通/带通)、仪表放大器前级(差分放大)
  • 电池供电的手持设备与便携式医疗仪器(对低功耗与低漂移有要求)
  • 需要高输入阻抗与低噪声的测量系统

五、设计与使用建议

  • 电源与去耦:在靠近芯片的 VDD 与 VSS 引脚处放置0.1 μF和1 μF并联去耦电容,以抑制高频噪声与瞬态电流。
  • 输入防护:尽管输入为轨到轨,但应避免将输入电压超过电源轨(可加限流/缓冲或二极管保护),尤其在电源断电时。
  • 负载与稳定性:输出可提供较大电流,但驱动大电容性负载时可能影响稳定性。必要时在输出端并联小串阻抗或使用缓冲网络以保证相位裕度。
  • 布局注意:高阻抗输入应尽量缩短回路与减少杂散电容,避免噪声耦合;敏感信号线宜走短线并远离高速开关源。
  • 工作温度与漂移:对温漂敏感的应用建议做温度校准或选择合适的偏置/滤波方案以降低长期误差。

六、封装与订购信息

  • 封装形式:SOIC-8,适合工业化板级装配。
  • 型号:SGM8542XS/TR(卷带/带盘包装,便于批量生产使用)。
  • 品牌:SGMICRO(圣邦微电子)。

总结:SGM8542XS/TR 以其轨到轨性能、超低输入偏置电流、低噪声与较高输出驱动能力,适合对精度、低功耗和高输入阻抗有要求的便携或工业级测量与信号调理应用。在使用时注意去耦、输入保护与负载匹配,可发挥其最佳性能。

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