WMSIC Electronic Components

SGMICRO SGM452TS8G/TR SGM452TS8G

ModelSGM452TS8G/TR
PackageSOIC-8
BrandSGMICRO
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
SGMICRO SGM452TS8G / TR
Type
SGMICRO
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SGMICRO
Electronic Component
SGM452TS8G/TR
Electronic Component
1
Package
SOIC-8
Electronic Component
Temperature Sensor
Electronic Component
±1℃
Electronic Component
1g
Electronic Component
1
Features
Comparator / Output; /; Low Power
Electronic Component
BM0095178198
Operating Voltage
2.7V~5.5V
Interface Type
I2C
Resolution
12bit
Electronic Component
Electronic Component
Electronic Component
4000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SGM452TS8G/TR 产品概述

SGM452TS8G/TR 是 SGMICRO(圣邦微)推出的一款高精度数字温度传感器,适用于需精确温度监测与本地温度保护的各类电子系统。器件提供 ±1℃ 的精度、12bit 的温度分辨率和 100ms 的温度转换时间,支持 I2C 总线通信,并集成硬件比较器/独立温控输出和片内数字滤波/平均处理,兼顾准确度与响应速度,同时具备低功耗待机特性,便于移动设备、工业控制和电源管理等多种场景应用。

一、主要特性

  • 温度测量精度:±1℃
  • 温度转换时间:100 ms(典型)
  • 温度分辨率:12-bit
  • 工作电压范围:2.7 V ~ 5.5 V
  • 接口类型:I2C(标准串行接口,支持主/从通信拓扑)
  • 功能特性:温度阈值监测、硬件比较器/独立温控输出
  • 内部数字处理:片内数字滤波与平均,提高测量稳定性
  • 低功耗待机模式,适合电池供电系统
  • 封装形式:SOIC-8,利于标准 PCB 安装和批量生产

二、典型规格与性能

SGM452TS8G/TR 提供工业级别的温度测量能力,12-bit 分辨率可细分为较小的温度步进,配合 ±1℃ 的整机精度,使得传感器既能满足常规环境监测需求,也能用于对热管理有较高要求的系统。100 ms 的转换时间保证了对温度变化的及时捕捉,而低功耗待机特性降低系统平均能耗,适合对能耗敏感的便携产品与远程监测设备。

(注:具体的测量范围、典型功耗数值、I2C 寄存器地址和完整电气特性应参考官方数据手册以获得详细参数与典型曲线。)

三、功能说明

  • 温度阈值监测:器件支持设定温度阈值并在超过阈值时触发告警,便于实现本地热保护或联动控制。
  • 硬件比较器/独立温控输出:集成的硬件比较器能在片上完成阈值判定并直接驱动独立输出引脚,实现快速、可靠的硬件保护响应,而无须主机频繁轮询。
  • 片内数字滤波/平均处理:对瞬态噪声与干扰有效抑制,提高测量稳定性和可重复性,尤其在电磁环境复杂或系统噪声较大的应用中有明显优势。
  • 低功耗工作模式:在不需要连续测量时,可进入低功耗待机以节约电能,适用于电池供电与节能场景。

四、接口与供电建议

  • I2C 接口:支持标准 I2C 通讯,便于与微控制器或系统总线集成。建议在 SDA、SCL 线上使用合适阻值的上拉电阻(根据系统电源与总线速率选择),并保证线长与线阻在允许范围内以保持信号完整性。
  • 供电与旁路:器件工作电压范围为 2.7 V 至 5.5 V,能兼容多种系统电源。建议在 VCC 与 VSS 之间放置 0.1 μF 陶瓷去耦电容,靠近器件引脚布局以抑制电源瞬变影响。
  • 时序与刷新:典型转换时间为 100 ms,若需要持续监测可按该周期或其整数倍读取;若仅依赖硬件告警,可减少 I2C 轮询次数以节省能耗。

五、封装与安装建议

  • SOIC-8 封装利于常规 SMT 贴装和波峰/回流焊工艺,适合批量生产。
  • 布局时注意温度感应位置的热耦合:若要测量系统环境温度,应远离高发热器件与散热通道;若用于测量某一器件温度,应尽量靠近被测元件并注意热路径设计。
  • 为减少封装引起的寄生热阻差异,可在 PCB 下方采用适当的铜面或热孔设计,帮助热量更均匀传递(设计细则视实际热管理要求而定)。

六、典型应用场景

  • 电源管理与电池组温度监控(充放电过程温控与安全保护)
  • 工业控制系统与过程监测(设备温度报警与寿命预测)
  • 通信设备与服务器机箱温度管理(风扇控制与散热策略)
  • 消费电子与智能家居(温控、环境监测)
  • 医疗仪器与精密测量设备的温度校准与保护

七、设计注意事项与最佳实践

  • 参考官方数据手册:在最终电路设计前,务必查阅 SGMICRO 的数据手册以获取详细电气特性、寄存器描述、推荐工作条件和典型应用电路。
  • 接地与去耦:良好的地平面和稳健的电源去耦对保证测量精度至关重要,建议在靠近器件的电源引脚布置去耦电容。
  • I2C 总线设计:采用合适阻值上拉电阻,避免过长的总线和多点布局引起信号反射或时序误差。
  • 抗干扰设计:若系统中存在高频开关干扰或电磁噪声,建议在信号线上增加滤波或在 PCB 布局上增设屏蔽/隔离区。

SGM452TS8G/TR 以其高精度、集成化保护功能和低功耗特性,适合在多种场景中作为可靠的温度监测与保护单元。结合合适的 PCB 布局与系统设计,可为热管理方案提供稳定、及时的温度信息与硬件级保护能力。若需进一步的电气参数、寄存器细节或封装引脚图,请参阅 SGMICRO 官方资料或联系厂商技术支持。

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