WMSIC Electronic Components

SGMICRO SGM620XS8G/TR SGM620XS8G

ModelSGM620XS8G/TR
PackageSOIC-8
BrandSGMICRO
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
SGMICRO SGM620XS8G / TR
Type
SGMICRO
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SGMICRO
Electronic Component
SGM620XS8G/TR
Electronic Component
1
Package
SOIC-8
Electronic Component
Instrumentation Amplifier
Electronic Component
0.11g
Power Supply
4.6V~36V
Electronic Component
1
Electronic Component
Output
Features
Resistor
Electronic Component
BM0264499236
Operating Temperature
40℃~+125℃
Amplifier
Electronic Component
Electronic Component
10us
Output Current
24mA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SGM620XS8G/TR 产品概述

一、产品简介

SGM620XS8G/TR 是由圣邦微(SGMICRO)推出的一款高精度单路仪表放大器,采用 SOIC-8 封装,专为微弱差分信号的精密放大而设计。器件具备极低输入失调与噪声、高共模抑制比以及轨到轨输出能力,适合对精度、稳定性和功耗有较高要求的传感器接口和数据采集前端应用。

二、主要特性

  • 共模抑制比(CMRR):105 dB(高抑制共模干扰)
  • 输入噪声密度(eN):6 nV/√Hz @ 1 kHz(低噪声,适合微小信号)
  • 轨到轨输出(Rail-to-Rail Output)
  • 供电范围(双电源):VEE ~ VCC = ±2.3 V 至 ±18 V(单、双电源支持)
  • 允许最大电源差值(VDD–VSS):36 V
  • 电源纹波抑制比(PSRR):110 dB(良好的电源抑制性能)
  • 输入失调电压(Vos):150 µV(初始失调低)
  • 输入失调电压温漂(Vos TC):200 nV/℃(温漂小,长期稳定)
  • 输入偏置电流(Ib):15 nA;输入失调电流(Ios):5 nA;Ios 温漂:50 pA/℃
  • 压摆率(SR):1.2 V/µs
  • 静态电流(Iq):1.3 mA(低功耗)
  • 输出电流能力:±24 mA(短路或驱动能力良好)
  • 稳定时间(settling time):10 µs(快速响应)
  • 放大器数:单路,输出类型:单端
  • 工作温度范围:-40 ℃ ~ +125 ℃

三、性能亮点与优势

  • 高精度:输入失调电压仅150 µV,且温漂极小(200 nV/℃),在需要长期稳定与高精度测量的场合表现优异。
  • 低噪声与高 CMRR:6 nV/√Hz 的低噪声配合 105 dB 的共模抑制能力,使其非常适合桥式传感器、热电偶等对微小差分信号敏感的测量。
  • 宽供电与轨到轨输出:支持从低电压单电源到宽幅双电源(最大36 V),且输出可接近电源轨,便于电源设计与系统级兼容。
  • 优秀的电源抑制与低功耗:110 dB 的 PSRR 和 1.3 mA 的静态电流,使器件在电源噪声环境下仍能保持稳定,同时适合便携/电池供电系统。
  • 快速响应与驱动能力:1.2 V/µs 的压摆率与 10 µs 的稳定时间,配合 ±24 mA 的输出驱动,满足多数模拟前端对速度与负载的需求。

四、典型应用

  • 应变计、压力传感器、力传感器(桥式测量)
  • 生物医学信号采集(如 ECG、EEG 前端)
  • 热电偶和温度传感器前端信号调理
  • 工业过程控制与数据采集系统(ADC 前置放大)
  • 精密测量仪器与便携式测试设备

五、封装与订购信息

  • 品牌:SGMICRO(圣邦微)
  • 型号:SGM620XS8G/TR
  • 封装:SOIC-8(适合通用 PCB 装配与中等散热需求)
    (更多具体的引脚定义、封装尺寸和标记信息请参见官方资料或数据手册。)

六、使用建议与注意事项

  • 电源去耦:为保证高精度与低噪声特性,建议在靠近芯片电源引脚处放置合适的去耦电容(如 0.1 µF 与 1 µF 的组合)。
  • 布局与接地:差分输入与参考地线应尽量缩短,采用星形或单点接地方式以降低地环路和共模干扰。
  • 输入共模范围:尽管器件具有轨到轨输出,输入共模范围和输出在接近电源轨时的线性度受限,请根据具体工作点参照数据手册确认以获得最佳线性度与精度。
  • 输入保护:在存在高压瞬态或直流偏置的场合,建议加限流电阻与保护二极管以防止输入超出安全区。
  • 温度影响:器件在工业温度范围内工作可靠,但若需极限精度,建议进行温度漂移校准或选择温度补偿方案。

如需进一步的电气特性曲线、典型应用电路或参考设计,请参阅 SGM620 的详细数据手册或联系厂商技术支持。

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