WMSIC Electronic Components

SGMICRO SGMOP07CXS8G/TR SGMOP07CXS8G

ModelSGMOP07CXS8G/TR
PackageSOIC-8
BrandSGMICRO
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
SGMICRO SGMOP07CXS8G / TR
Type
SGMICRO
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SGMICRO
Electronic Component
SGMOP07CXS8G/TR
Electronic Component
1
Package
SOIC-8
Electronic Component
Precision Op Amp
Electronic Component
0.141g
Electronic Component
1
Electronic Component
Output
Electronic Component
BM0264998700
Operating Temperature
40℃~+125℃
Amplifier
Electronic Component
Output Current
34mA
(SR)
3V/us
Power Supply Voltage
3.6V~36V
Static Current(Iq)
750uA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SGMOP07CXS8G/TR 产品概述

一、简介

SGMOP07CXS8G/TR 是圣邦微(SGMICRO)推出的一款高精度单路运算放大器,采用 SOIC-8 封装。器件强调低失调、低噪声和轨到轨输出能力,适合高精度测量与信号调理场合。器件在较宽的电源与温度范围内保持优异性能,适配工业级应用。

二、主要性能参数

  • 放大器数:单路
  • 增益带宽积(GBP):600 kHz
  • 压摆率(SR):3 V/μs
  • 输入偏置电流(Ib):1 nA
  • 输入失调电压(Vos):35 μV
  • 输入失调电压温漂(Vos TC):300 nV/℃
  • 输入失调电流(Ios):1 nA
  • 共模抑制比(CMRR):140 dB
  • 噪声密度(eN):8.5 nV/√Hz @ 1 kHz
  • 静态电流(Iq):750 μA
  • 输出电流:34 mA(典型)
  • 输出特性:轨到轨输出
  • 工作温度:-40 ℃ ~ +125 ℃
  • 单电源供电:3.6 V ~ 36 V
  • 双电源供电:支持 ±1.8 V 到 ±18 V 范围,最大电源差不超过 36 V
  • 封装:SOIC-8
  • 品牌:SGMICRO(圣邦微)
  • 型号:SGMOP07CXS8G/TR

三、优势与典型应用

  • 精密低漂移:35 μV 的低失调配合 300 nV/℃ 的温漂,适合温度变化场合的高精度测量与校准。
  • 低噪声与高 CMRR:8.5 nV/√Hz 的低噪声和 140 dB 的高共模抑制,有利于弱信号放大与差分信号前端。
  • 宽电源与工业级温度:单电源 3.6–36 V、工作温度达 -40–125 ℃,适合工业、仪器与汽车类供应链(非 AEC 标注时请确认)。
  • 轨到轨输出与较大输出电流(34 mA):便于驱动后级 ADC、采样电路或小负载执行器。
    典型应用包括传感器前端、数据采集系统、精密滤波器、ADC 驱动以及便携或工业电源系统中的放大与缓冲。

四、使用建议与注意事项

  • 输入保护与偏置:因输入偏置电流为 1 nA,长电缆或高阻抗传感器连接时应注意泄漏和漂移,建议加高阻抗保护与屏蔽。
  • 电源去耦:为保证低噪声与稳定性能,建议在靠近芯片的电源引脚处放置 0.1 μF 与 10 μF 的去耦电容。
  • 布局与接地:关键信号采用短路由与单点接地,敏感输入可考虑护环(guard)以减少表面漏流对失调的影响。
  • 带宽与闭环增益:GBP 600 kHz,适用于低至中频率带宽应用,高闭环增益时注意带宽与相位裕度。

五、封装与订购信息

  • 封装:SOIC-8,适合常规 PCB 贴片工艺。
  • 型号与货号:SGMOP07CXS8G/TR,详询圣邦微授权分销商以获取样片、技术文档与可靠性信息。

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