WMSIC Electronic Components

SGMICRO SGM8273-1XS8G/TR SGM8273

ModelSGM8273-1XS8G/TR
PackageSOIC-8
BrandSGMICRO
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
SGMICRO SGM8273-1XS8G / TR
Type
SGMICRO
Minimum package
4000 未知

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SGMICRO
Electronic Component
SGM8273-1XS8G/TR
Electronic Component
1
Package
SOIC-8
Electronic Component
Operational Amplifier
Electronic Component
0.133g
Electronic Component
1
Electronic Component
Output
Electronic Component
BM0265689227
Operating Temperature
40℃~+125℃
Amplifier
1
Output Current
40mA
(SR)
6V/us
Power Supply Voltage
3.3V~36V
Static Current(Iq)
600uA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SGM8273-1XS8G/TR 产品概述

一、产品简介

SGM8273-1XS8G/TR 是圣邦微(SGMICRO)推出的一款单路精密运算放大器,采用 SOIC-8 封装。该器件支持轨到轨输入与轨到轨输出,适用于对输入范围与输出摆幅要求高的系统。器件工作温度范围广(-40℃ 至 +125℃),可在单电源或双电源模式下稳定工作,适配多种工业与便携式应用场景。

二、主要性能特点

  • 单路运算放大器,封装:SOIC-8(便于插板与自动贴片生产)
  • 轨到轨输入与轨到轨输出,最大电源电压差可达 36V
  • 增益带宽积(GBP):4 MHz,压摆率(SR):6 V/µs
  • 超低输入失调电压:典型 1 mV,温漂 2 µV/℃
  • 极低输入偏置电流/失调电流:10 pA / 10 pA(适合高阻抗传感器)
  • 低噪声密度:9 nV/√Hz @1 kHz,适合精密信号调理
  • 共模抑制比(CMRR):115 dB,静态电流(Iq):600 µA
  • 输出驱动能力:±40 mA 峰值(取决于电源与散热条件)
  • 工作温度:-40℃ ~ +125℃

三、电源与工作范围

  • 单电源工作:3.3 V ~ 36 V(适用于多种电池与工业电源)
  • 双电源工作:支持 ±1.65 V 至 ±18 V(即负、正电源幅值范围为 1.65 V~18 V)
  • 最大电源差(Vdd-Vss):36 V。轨到轨设计使得在接近电源轨时仍能保持输入/输出性能,但实际能否到达全摆幅取决于负载与电源电压。

四、典型应用场景

  • 传感器前端(高阻抗传感器、电压采样)
  • 精密信号调理与缓冲(ADC 驱动、滤波器)
  • 数据采集系统、便携式医疗设备与工业控制模块
  • 低噪声放大、仪表放大器级的差分/单端处理

五、封装与订购信息

  • 器件型号:SGM8273-1XS8G/TR
  • 品牌:SGMICRO(圣邦微)
  • 封装形式:SOIC-8
  • 包装方式:TR 表示盘带(Tape & Reel),适合卷装贴片生产
  • 推荐工作环境:-40℃ ~ +125℃,注意在高温或大电流条件下保证良好散热。

六、使用建议与注意事项

  • 为保证低噪声与稳定性,建议在电源近端使用合适的去耦电容(如 0.1 µF 与 1 µF 并联)。
  • 虽为轨到轨器件,但当输出驱动大电流或接近电源极限时,线性与失真可能受限;如需接近电源摆幅,可在系统层面验证实际表现。
  • 输入偏置电流非常小(pA 级),在高阻抗电路中应注意 PCB 板面漏电与清洁处理,以避免偏流影响精度。
  • 若对带宽或驱动能力有更高要求,需根据 GBP 与 SR 指标评估电路增益与负载情况。

该器件以其低失调、低噪声、轨到轨特性和宽电源范围,在精密模拟前端与工业应用中具有良好适配性。若需典型接线、频率响应或具体应用电路图,可进一步提供您的应用场景以便给出更针对性的设计建议。

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