WMSIC Electronic Components

SGMICRO SGM61433XPS8G/TR SGM61433XPS8G

ModelSGM61433XPS8G/TR
PackageSOIC-8
BrandSGMICRO
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
SGMICRO SGM61433XPS8G / TR
Type
SGMICRO
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SGMICRO
Electronic Component
SGM61433XPS8G/TR
Electronic Component
1
Package
SOIC-8
Electronic Component
DC-DC Power Supply IC
Electronic Component
0.53g
Electronic Component
1
Features
Frequency Synchronous
Type
Electronic Component
Synchronous
Electronic Component
Electronic Component
BM0227758595
Operating Temperature
40℃~+125℃@(TJ)
Operating Voltage
4.5V~42V
Switching Frequency
100kHz~2.5MHz
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SGM61433XPS8G/TR — 降压型 DC-DC 开关稳压器 概述

一、产品简介

SGM61433XPS8G/TR 是圣邦微(SGMICRO)推出的一款降压型(Buck)开关稳压器,采用内置开关管设计,单通道可调输出。器件工作电压范围宽(4.5V~42V),输出电压可设定在0.8V~36V,最大输出电流可达3.5A,适合工业、汽车及高压电源降压场合。封装为 SOIC-8,器件工作结温范围为 -40℃~+125℃(TJ)。

二、主要规格与特性

  • 功能类型:降压型(Buck)
  • 输入电压:4.5V ~ 42V
  • 输出电压:0.8V ~ 36V(可调)
  • 输出电流:最大 3.5A
  • 开关频率:100kHz ~ 2.5MHz(可配置)
  • 静态电流(Iq):148 μA(静态功耗低,适合待机节能)
  • 同步整流:否(需外接肖特基二极管作为续流器)
  • 开关管:内置
  • 通道数:1
  • 封装:SOIC-8
  • 典型应用:工业控制、车载电子、通信设备、分立电源模块

三、典型优势与权衡

  • 优势:宽输入电压、高输出电流、可配置开关频率及可调输出范围,封装紧凑,静态电流低,适合需要高压降压且效率与体积需平衡的场合。
  • 权衡:器件为非同步整流结构,低压差或大电流时整流二极管的导通损耗相对较高,系统效率受限;在高 Vin 或高 Iout 条件下需注意热设计及肖特基二极管的功耗管理。

四、设计要点与选件建议

  • 续流二极管:选择低正向压降、高速肖特基二极管(如 SiC/Schottky),以降低整流损耗并提高效率。
  • 电感选择:根据期望电流纹波 ΔI 计算电感 L(ΔI = (Vin–Vout)·D / (L·fs)),电感电流额定值应 ≥ 峰值电流(Iout + ΔI/2),注意饱和电流与温升。
  • 输入/输出电容:输入侧选用低 ESR 的陶瓷电容以抑制尖峰纹波;输出侧结合陶瓷与低 ESR 电解或钽电容改善短路及低频纹波响应。确保电容电压等级能承受最大 Vin。
  • 开关频率取舍:高频(>>几百 kHz)可减小 L、C 体积但增加开关损耗与 EMI;低频有利于效率但组件尺寸增大。依据系统 EMI 与效率目标选择 100kHz–2.5MHz 之间合适频率。
  • 稳定性与补偿:若器件需要外部补偿,请按数据手册给出的补偿网络设计,确保环路相位裕量与瞬态响应。

五、布局与热管理

  • 布局:最小化开关回路和输入回路环路面积(开关管、肖特基、输入电容之间);靠近器件放置旁路电容,优化地平面以降低 EMI。
  • 散热:高 Vin 与高 Iout 下功耗明显,SOIC-8 封装需通过底层铜与散热垫、散热走线或外加铜箔散热片降低结温。在设计时预留热余量并验证热仿真与实际温升。
  • 保护与测试:系统级需验证过流、短路、过温等极限工况(具体保护行为请参考器件数据手册)。

六、应用建议与后续动作

SGM61433 适用于车载电源降压、工业供电模块、分布式电源点及电池供电系统等场景。设计前请下载并详细阅读官方数据手册,核对引脚功能、保护特性和典型应用电路;样片验证时关注效率曲线、热升与瞬态响应,以确定器件在目标工况下的可行性。若需更具体的参考电路、元件清单或布局示例,可提供工作点(Vin、Vout、Iout、目标频率)以便给出更精确的设计建议。

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