WMSIC Electronic Components

SGMICRO SGM8532XS/TR SGM8532XS

ModelSGM8532XS/TR
PackageSOIC-8
BrandSGMICRO
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
SGMICRO SGM8532XS / TR
Type
SGMICRO
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SGMICRO
Electronic Component
SGM8532XS/TR
Electronic Component
1
Package
SOIC-8
Electronic Component
Operational Amplifier
Electronic Component
0.197g
Electronic Component
1
Electronic Component
Output
Features
Built-in
Electronic Component
BM0228719099
Operating Temperature
40℃~+125℃
Amplifier
2
Output Current
85mA
(SR)
200V/ms
Power Supply Voltage
2.1V~5.5V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SGM8532XS/TR 产品概述

一、产品简介

SGM8532XS/TR 是圣邦微(SGMICRO)推出的一款低功耗、双路轨到轨运算放大器。器件在宽电源范围下支持轨到轨输入与输出,拥有 500kHz 的增益带宽积、低偏置电流和较低噪声,适合便携与电池供电场合的模拟前端与信号调理应用。封装为 SOIC-8,TR 表示卷带盘装(Tape & Reel)。

二、关键规格(典型/最大)

  • 放大器数:双路
  • 电源电压:单电源 2.1V ~ 5.5V;双电源 VEE~VCC = -1.05V ~ 2.75V;最大电源差距 6V
  • 轨到轨:输入/输出均为轨到轨(RRIO)
  • 增益带宽积(GBP):500 kHz
  • 压摆率(SR):0.2 V/μs(200 V/ms)
  • 输入失调电压(Vos):5.4 mV;温漂 1.7 μV/℃
  • 输入偏置电流(Ib):0.5 pA;失调电流(Ios):0.5 pA
  • 噪声密度:33 nV/√Hz @1 kHz
  • 共模抑制比(CMRR):88 dB
  • 静态电流(Iq):典型 18 μA(单通道);双路器件总静态电流约为 36~39 μA(视工况)
  • 输出驱动能力:峰值可达 85 mA
  • 工作温度范围:-40 ℃ ~ +125 ℃

三、性能亮点与应用场景

  • 低功耗:单通道典型静态电流 18 μA,适合电池供电与便携设备。
  • 轨到轨 I/O:在低电压单电源(≥2.1V)下可处理接近电源轨的信号,便于直接与 ADC/DAC 和电池电压接口。
  • 超低输入偏置电流(pA 级):适合高阻抗传感器、霍尔传感器、热电偶前端、仪表放大器前级等。
  • 低噪声与中等带宽(500 kHz):适合低频精密放大、主动滤波、采样保持与信号调理,但非高速信号处理器件。
  • 输出驱动强:短时可驱动高达 85 mA,适合驱动小负载或在峰值情况下保持线性输出。

典型应用包括:便携式仪器、传感器接口与信号调理、低功耗数据采集前端、滤波器与缓冲放大器、工业控制与便携医疗设备。

四、使用建议与注意事项

  • 电源去耦:在靠近器件的 VCC/VEE 引脚放置 0.1 μF 陶瓷去耦电容,降低电源噪声与振荡风险。
  • 输入保护与高阻抗布线:对于 pA 级偏置电流应用,注意 PCB 表面污染与漏电路径,采用清洁工艺、加大输入阻抗隔离与使用防护涂层或保护阻容。
  • 容性负载:较高的输出驱动能力并不保证对大容性负载的稳定性,必要时在输出与负载之间加入小电阻阻尼。
  • 共模范围:尽管为轨到轨输入,工作时仍应参考完整数据手册对共模范围及输出摆幅限制进行验证,确保在极限输入下仍满足线性要求。
  • 温度与电源裕度:注意在高温(+125 ℃)和接近最大电源差(6V)情况下的性能漂移与功耗变化。

五、封装与型号说明

  • 型号:SGM8532XS/TR(双路运放,SOIC-8,卷带盘装)
  • 封装:SOIC-8,适合常规表面贴装生产工艺,便于替换与批量安装。

总结:SGM8532XS/TR 是一款面向低功耗、精密信号调理的双路轨到轨运放,兼具 pA 级偏置电流与较低噪声,适用于电池供电与便携式模拟前端场景。欲获取更详尽的电气特性、引脚排列与典型应用电路,请参考圣邦微官方数据手册。

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