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CL10B103KC8WPNC
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
18
specifications
Core information
- Product name
- SAMSUNG CL10B103KC8WPNC
- Type
- SAMSUNG
- Minimum package
- 4000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SAMSUNG
- Electronic Component
- CL10B103KC8WPNC
- Electronic Component
- 1
- Electronic Component
- 10nF
- Package
- 0603
- Electronic Component
- SMD Capacitor(MLCC)
- Electronic Component
- ±10%
- Electronic Component
- 0.035g
- Electronic Component
- 1
- Electronic Component
- BM0258699305
- Electronic Component
- X7R
- Voltage
- 100V
- Electronic Component
- Electronic Component
- Electronic Component
- 4000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
CL10B103KC8WPNC 产品概述
一、产品简介
CL10B103KC8WPNC 为 SAMSUNG（三星）生产的贴片多层陶瓷电容（MLCC），标称容量 10nF，初始容差 ±10%，额定电压 100V，介质材料为 X7R，封装规格为 0603（1608 公制）。该器件在体积小、耐压高和温度稳定性适中的应用场景具有良好适配性，适合中高压直流或交流回路的旁路、耦合与滤波等用途。
二、电性能要点
- 标称容量：10nF；初始容差 ±10%（20℃ 标称值）。
- 额定电压：100V DC，适用于中高压供电轨的去耦与滤波。
- 温度特性：X7R 型介质，工作温度范围通常为 −55℃ 至 +125℃，在该温区内电容值变化控制在 ±15% 以内（关于温漂请参考厂家具体规格书）。
- 需注意 DC-bias 效应：高介电常数材料在施加直流偏压时电容会下降，实际电路中建议按实测或厂家提供的 DC-bias 曲线进行裕量设计。
三、典型应用场景
- 电源去耦与旁路：适用于 24V、48V 等中高压供电轨的局部去耦与能量缓冲。
- 滤波与噪声抑制：开关电源输入/输出滤波、PWM 驱动回路的高频噪声抑制。
- 耦合/阻断直流：在高压模拟电路中的交流耦合或直流阻断（需评估耐压裕度）。
- 抑制/缓冲：作为吸收或阻尼元件用于驱动器或马达控制回路。
四、封装与可靠性
0603（1608）封装在保持较小 PCB 占用的同时，能够承受常规的回流焊工艺与机械应力。为保证长期可靠性，应遵循厂家对焊接温度曲线（符合 JEDEC/IPC 推荐回流曲线）、存储与干燥包装的要求，避免在潮湿条件下长期暴露以减小裂纹和虚焊风险。高压应用时应注意爬电距离与绝缘设计。
五、选型与使用建议
- 考虑 DC-bias：若工作电压接近额定值或要求精确容量，请参考 DC-bias 曲线并选用更大标称容量以补偿降容。
- 温度与频率影响：X7R 在温度与频率上表现良好，但非 C0G/NP0，若需极高稳定性或低损耗，请考虑替代介质。
- 工艺注意：推荐使用符合无铅回流的焊接工艺，避免过度机械挤压封装边缘。取放与贴装时使用符合规格的吸嘴与剪切力控制。
- 质量控制：量产导入时做批次抽测容量、损耗角正切（DF）、漏电与耐压试验，重点关注高温老化与焊后可靠性。
总结：CL10B103KC8WPNC 以其 100V 的耐压能力和 0603 的紧凑尺寸，适用于对体积和电压有双重要求的中高压电子设计场景。正确评估 DC-bias 与温漂影响并遵循推荐焊接与存储规范，可获得稳定且可靠的使用表现。若需更详细的电气特性曲线与可靠性数据，建议参照三星官方规格书。
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