WMSIC Electronic Components

CL05B223KB5VPNC

ModelCL05B223KB5VPNC
Package0402
BrandSAMSUNG
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

18 specifications

Core information

Product name
SAMSUNG CL05B223KB5VPNC
Type
SAMSUNG
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SAMSUNG
Electronic Component
CL05B223KB5VPNC
Electronic Component
1
Electronic Component
22nF
Package
0402
Electronic Component
SMD Capacitor(MLCC)
Electronic Component
±10%
Electronic Component
0.013g
Electronic Component
1
Electronic Component
BM0257686737
Electronic Component
X7R
Voltage
50V
Electronic Component
Electronic Component
Electronic Component
10000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

CL05B223KB5VPNC 产品概述

一、产品简介

CL05B223KB5VPNC 是三星(SAMSUNG)系列贴片多层陶瓷电容(MLCC),封装为 0402(公制 1005),标称电容值 22nF(223),公差 ±10%(K),额定电压 50V,介质材料等级 X7R。该器件面向对体积和性能有较高要求的便携与工业电子设备,提供稳定的通用去耦、滤波与旁路功能。

二、主要参数

  • 容值:22nF(22,000 pF)
  • 公差:±10%(K)
  • 额定直流电压:50V
  • 介质:X7R(温度范围常见 -55°C 至 +125°C,随温度变化电容值约在 ±15% 范围内)
  • 封装:0402(1005 公制)
  • 品牌:SAMSUNG

三、性能特点

  • 小型封装、体积小、适合高密度安装。
  • X7R 类介质在宽温区间内保持较好的电容稳定性,适合一般旁路与滤波场合。
  • 低等效串联电阻(ESR)与低等效串联电感(ESL),有利于高频去耦性能。
  • 额定 50V 提供良好耐压能力,适用于中低电压电源轨设计。
  • 表面贴装,兼容无铅回流焊工艺。

四、典型应用

  • 电源去耦与旁路(DC-DC 转换器输入/输出滤波)
  • 高频滤波与噪声抑制(模拟与数字混合电路)
  • 时序与振荡电路中的耦合/定时电容
  • 手持终端、物联网模块、消费电子、工业控制板等高密度布局场景

五、封装与识别

型号中“223”即表示 22×10^3 pF = 22nF,“K”代表 ±10% 公差,“05/0402” 通常指封装规格,后缀为厂家工艺/包装与品质代码。订购时请以供应商数据表与料号全码为准,确认卷带、盒装等包装形式。

六、布局与焊接建议

  • 将 MLCC 尽可能靠近被去耦器件的电源引脚放置,以减小回路面积与寄生感抗。
  • 采用对称焊盘与合理过孔设计,避免应力集中,焊盘尺寸参考三星或 IPC 推荐图样。
  • 兼容常规回流焊工艺,但对湿敏性元件应按 JEDEC/MIL 规范储存并在必要时回流前烘烤。
  • 在高电压/高温或频繁热循环环境下,建议进行实际测试以验证长期稳定性与焊接可靠性。

七、可靠性与注意事项

  • X7R 为类 II 陶瓷,存在温度与直流偏压(DC bias)引起的电容下降现象;在高偏压或高场强下应测量实际有效电容以确认设计裕量。
  • 小尺寸封装在机械应力或热循环下可能发生裂纹,建议合理板型与应力释放设计。
  • 推荐在采购与生产中参考三星最新规格书、放电测试与寿命可靠性数据。

八、采购与替代型号

CL05B223KB5VPNC 适合需要 22nF/50V/0402 的通用方案。若需不同电压、公差或介质,可选用相同封装下的其他电压等级或不同温度特性的 MLCC。采购时注意批次与规格书一致,样品验证建议在目标应用工况下完成。

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