WMSIC Electronic Components

ST MMBTRC102SS digital transistor MMBTRC102SS

ModelMMBTRC102SS
PackageSOT-23
BrandST
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
ST MMBTRC102SS
Type
ST
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ST
Electronic Component
MMBTRC102SS
Electronic Component
1
Package
SOT-23
Electronic Component
1 NPN
Electronic Component
Digital Transistor
Electronic Component
0.027g
Electronic Component
1
Electronic Component
BM0228727469
Resistor
1
Resistor
10kΩ
Transistor Type
NPN
Frequency(f T)
200MHz
Power Dissipation(Pd)
200mW
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MMBTRC102SS 产品概述

MMBTRC102SS 为 SOT-23 小封装器件,适用于低功耗、小信号开关与放大场合。下文基于提供的关键参数,对器件性能、适用场景及设计注意事项做简要说明,便于快速评估与电路应用。

一、主要参数解读

  • 耗散功率 Pd = 200 mW:器件在无额外散热条件下的最大功耗,适合低电流、小功率用途。
  • 直流电流增益 hFE = 50 @ Ic=10 mA, VCE=5 V:在 Ic=10 mA、VCE=5 V 条件下的典型直流放大倍数,可据此估算基极驱动电流。
  • 最小输入电压 VI(on) = 2.4 V / 最大输入电压 VI(off) = 1 V:表示输入信号的开/关阈值区间,输入高于约2.4 V 可靠导通,低于约1 V 可确定截止。
  • 输出电压 VO(on) = 300 mV:导通时典型压降,表明导通状态下电压损耗较小,有利于保持较低功耗。
  • 电阻比率 = 1:通常表示器件内部的两路电阻或匹配网络的阻值比为 1:1(如用于配对或分压场合),具体含义以厂方资料为准。

二、封装与热管理

SOT-23 小封装体积小但散热能力有限。200 mW 的耗散功率要求在 PCB 布局上采用较好的铜箔散热、缩短热路径并避免高功率集中。若实际工作环境温度较高或电流高于典型值,应做热仿真或选用更大散热能力的封装/外部散热措施。

三、典型应用场景

  • 低电平数字控制的开关、驱动小负载(继电器驱动需注意电流限制)。
  • 小信号放大与电平转换(依据 hFE 在 10 mA 区间的放大能力)。
  • 电路保护、互锁和逻辑接口场合,利用明确的输入阈值实现可靠开关。

四、驱动与偏置建议

为得到稳定的 Ic≈10 mA 工作点,可按下列步骤估算基极电阻:所需 Ib ≈ Ic / hFE = 10 mA / 50 = 0.2 mA;若输入高电平为 3.3 V,假设基-发间压降约 0.7 V,则基极限流电阻 R ≈ (3.3−0.7) / 0.2 mA ≈ 13 kΩ(此为近似示例,实际设计请以测量或器件数据为准)。注意保证输入高于 2.4 V 可可靠导通,低于 1 V 可可靠截止。

五、PCB 布局与测试重点

  • 将器件靠近负载或信号源放置,尽量减少走线阻抗和寄生电感。
  • 提供足够的铜面积以扩散热量;关键测试项为在目标电流下测量 VO(on)、Pd 与结温。
  • 测试时注意在不同温度与电压条件下验证 hFE 与开关阈值的变化。

六、选型与可靠性建议

若应用需要更高功率或更强的热鲁棒性,应考虑更大封装或功耗等级更高的替代产品。电阻比率与其他内部结构细节请以 ST(先科)正式数据手册为准,避免在关键匹配应用中仅凭简单参数假设设计。

若需我帮助基于目标工作点给出具体偏置计算、等效电路或 PCB 布局建议,请提供工作电压、目标负载电流与环境温度。

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