WMSIC Electronic Components

ST 1N4750APF-M Zener diode 1N4750APF

Model1N4750APF-M
PackageDO-41
BrandST
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
ST 1N4750APF-M
Type
ST
Minimum package
2500 盒

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ST
Electronic Component
1N4750APF-M
Electronic Component
1
Package
DO-41
Electronic Component
Zener Diode
Electronic Component
0.225g
Electronic Component
1
(Zzk)
750Ω
(Zzt)
35Ω
Electronic Component
BM0230491847
Diode
1
Power Dissipation(Pd)
1W
Electronic Component
25.65V~28.35V
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

1N4750APF-M 27V 稳压二极管(1W)产品概述

一、概述

1N4750APF-M 是一款额定稳压值为 27V 的硅稳压二极管,额定耗散功率为 1W,采用常见的 DO-41 环氧封装,适合通孔安装。该器件由 ST(先科)品牌供应,结构稳健,适用于低功率稳压、基准源和过压钳位等场合。

二、主要参数

  • 标称稳压值(Vz):27V
  • 稳压范围:25.65V ~ 28.35V(±5%)
  • 反向漏电流(Ir):5 μA @ 20.6V
  • 最大耗散功率(Pd):1W
  • 动态阻抗(Zzt):35 Ω
  • 拐点阻抗(Zzk):750 Ω
  • 封装:DO-41,通孔安装

三、电气特性与使用要点

  • 最大允许电流:在器件耗散功率不超过 1W 的条件下,理论最大稳定电流 Iz_max ≈ Pd / Vz ≈ 1W / 27V ≈ 37 mA。实际使用中应留有裕量并考虑散热与环境温度,建议按应用需求限制在更低电流范围内。
  • 漏电流与稳压精度:在较低偏压(如 20.6V)时反向电流仅为 5 μA,有利于低泄漏场合。但稳压范围为 25.65–28.35V,用户应在设计时考虑该公差。
  • 动态阻抗说明:Zzt 为 35 Ω,表明在测试工作点附近的小信号稳压能力;Zzk 为 750 Ω,表示在折返或低电流区的电压变化敏感度较高。若需更精确的参考源,应注意选用合适的工作电流以降低动态阻抗影响。
  • 串联限流:使用时常在稳压二极管的输入端串联电阻以限制最大电流,计算方法为 R = (Vin - Vz) / Iz(Iz 取实际工作电流),并确保电阻和二极管功耗满足额定值。

四、典型应用

  • 小功率线性稳压与基准电源
  • 过压保护与浪涌钳位
  • 仪器仪表的参考电压源
  • 消费电子与通信设备中的局部稳压模块

五、封装与安装注意事项

  • DO-41 封装适合通孔焊接,安装时注意保持良好热路径以利于散热。
  • 在高环境温度或散热条件较差时,应降低工作电流或采用外加散热措施以避免超过 1W 的耗散极限。
  • 焊接过程要避免长时间高温暴露,推荐按照通孔器件焊接规范进行回流/波峰焊处理。

六、选型与替代建议

  • 若需更低动态阻抗或更高精度的基准,请考虑功率更大或专用参考源元件。
  • 在高能量浪涌保护场合,建议配合能量吸收器件(如串联电阻、PTC、TVS)共同使用,以延长器件寿命。
  • 替代器件时应对比稳压值、耗散功率、动态阻抗与漏电流参数,确保在目标工作点下性能满足要求。

本器件适用于对稳压值和功率要求不高但需可靠性和通用封装的电路场合。在实际设计中,请结合温升、散热和期望工作电流进行详细计算与测试。

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