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ST MMBT7002 MOSFET MMBT7002
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ST MMBT7002
- Type
- ST
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ST
- Electronic Component
- MMBT7002
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.028g
- Electronic Component
- 1
- Electronic Component
- BM0232256315
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 50pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MMBT7002 产品概述
一、产品简介
MMBT7002 为单只 N 沟道增强型场效应管（MOSFET），由 ST（先科）生产，封装为 SOT-23。器件额定漏源电压为 60V，额定功耗 200mW，适用于低功率、低电流的开关与信号控制场合。体积小、寄生电容较低，便于高速小信号切换与 PCB 空间受限的设计。
二、主要电气参数
- 漏源电压 Vdss：60 V
- 连续漏极电流 Id：115 mA
- 导通电阻 Rds(on)：7.5 Ω @ Vgs=10V, Id=500 mA
- 阈值电压 Vgs(th)：2.5 V @ Id=250 μA
- 耗散功率 Pd：200 mW
- 输入电容 Ciss：50 pF；输出电容 Coss：25 pF；反向传输电容 Crss：5 pF
三、性能特点与解读
- 高电压耐受：60V 的耐压使其适用于中等电压的开关场景（例如电源管理、小型电源轨切换）。
- 低电流应用定位：115mA 的连续电流和 200mW 的耗散功率限制了其在大电流路径的使用，更适合作为控制开关或信号开断元件。
- 导通电阻说明：7.5Ω 在 Vgs=10V 时为典型值；若驱动电压低于 10V（如 3.3V 或 5V），Rds(on) 将显著上升，应在设计时考虑压降和功耗。
- 开关性能：较小的 Ciss/Coss/Crss 有助于降低驱动负担和提升边沿响应，适合中低速开关应用。
四、封装与引脚
SOT-23 小封装利于高密度板上布局，但受限于散热能力。建议在 PCB 设计中配合较大铜箔面积和散热过孔以降低结温。
五、典型应用场景
- 低功率负载开关与断路（如传感器供电、继电器驱动前级）
- 电平转换与信号开关（模拟/数字信号切换）
- 电池保护与电源路径选择（需要注意电流与功耗限制）
- 小型电源管理与电压监控电路
六、选型建议与注意事项
- 在使用前务必查阅器件完整规格书，确认最大允许 Vgs、工作温度范围及瞬态耐受能力。
- 若工作电流接近或超过额定 Id 或 Pd，应选用 Rds(on) 更低、功耗能力更强的器件或并联/替代更大封装产品。
- PCB 上应优化散热：加大焊盘面积、使用多层铜、必要时布置过孔到内层/背面铜箔。
- 注意门极驱动电压：为获得规格表中 Rds(on)，需足够的 Vgs 驱动；若只用 3.3V 驱动，应测试实际 Rds(on) 与温升。
如需针对具体应用（工作电压、开关频率、最大载流等）给出更详细的选型与电路建议，可提供电路条件与性能目标以便进一步优化。
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