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ST MMBT9013G transistor MMBT9013G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ST MMBT9013G
- Type
- ST
- Minimum package
- 3000
Technical parameters
- Electronic Component
- ST
- Electronic Component
- MMBT9013G
- Electronic Component
- 1
- Package
- SOT-23(SOT-23-3)
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.028g
- Electronic Component
- 1
- Electronic Component
- BM0264213259
- Transistor Type
- NPN
- Frequency(f T)
- 100MHz
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- 3000
- Collector Current(Ic)
- 500mA
- Current (h FE)
- 100
- Voltage(Vebo)
- 5V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MMBT9013G 产品概述
产品简介
MMBT9013G是一款高性能NPN型三极管，广泛应用于低功率放大和开关电路。该产品由知名厂商STMicroelectronics（先科）生产，具有良好的电气性能和稳定性，适合多种电子设计方案。
基础参数
- 功率消耗（Pd）：200mW
- 晶体管类型：NPN
- 特征频率（fT）：100MHz
- 直流电流增益（hFE@Ic,Vce）：100@50mA, 1V
- 集射极击穿电压（Vceo）：30V
- 集电极-发射极饱和电压（VCE(sat)@Ic,Ib）：600mV@500mA, 50mA
- 集电极截止电流（Icbo）：100nA
- 集电极电流（Ic）：500mA
关键特性
MMBT9013G的关键特性使其成为高效电路设计的优秀选择。具有100MHz的特征频率，意味着其在高频应用中表现优越，能够有效处理较高速信号。此外，Vceo达到30V的最大集射极击穿电压，为电路提供了较好的电压裕量，适合在较高电压应用场合中使用。
其高达100的直流电流增益保证了在10至50mA的操作范围内，三极管能够输出强大的电流驱动能力。集电极-发射极饱和电压为600mV（在500mA和50mA的条件下）显示了它在开关应用中的低饱和特性，有助于减少功耗和提高效率。
应用场景
MMBT9013G广泛应用于各种电子设备中，尤其是在以下场景中表现突出：
放大电路：由于其高增益特性，MMBT9013G在音频放大器和射频放大器中被普遍使用，能够有效提升信号的强度。
开关电路：在开关电路中，由于其低饱和电压和高集电极电流能力，可用于控制较高功率负载，如继电器和电动机的驱动。
数字电路：它同样适用于数字电路中的信号放大和开关操作，能够确保信号的快速转换和处理。
线性电源：可应用于线性稳压电源设计中，提供稳定的输出电压和电流。
封装与兼容性
MMBT9013G采用SOT-23封装，体积小巧，适合于密集布置的电子产品。该封装也便于表面贴装（SMD）工艺，有助于简化集成和生产流程。此外，与其他SOT-23封装的元件兼容，使其在选择方案时更具灵活性。
结论
MMBT9013G是一款高性能的NPN型三极管，凭借其优越的电气特性和应用广泛性，成为电子设计师和工程师的重要工具。其出色的频率响应、高增益和有效的功率处理能力，使得MMBT9013G在现代电子产品开发中具有重要地位，适合于各种放大和开关电路的需求。无论是用于消费电子、通信设备，还是工业控制系统，MMBT9013G都能够提供可靠的性能支持，是电子元器件市场中的一款理想选择。
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