WMSIC Electronic Components

ST BC807-40 transistor BC807

ModelBC807-40
PackageSOT-23
BrandST
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
ST BC807-40
Type
ST
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ST
Electronic Component
BC807-40
Electronic Component
1
Package
SOT-23
Electronic Component
1 PNP
Electronic Component
Transistor(BJT)
Electronic Component
0.028g
Electronic Component
1
Electronic Component
BM0226493309
Transistor Type
PNP
Frequency(f T)
80MHz
Power Dissipation(Pd)
300mW
Electronic Component
Electronic Component
Electronic Component
3000
Collector Current(Ic)
500mA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BC807-40 产品概述

一、主要特性

BC807-40 为 PNP 型小信号晶体管,适用于开关与放大电路。器件具备较高的直流电流增益和较低的漏电流,工作频率可满足中高频应用需求。封装为 SOT-23,体积小,便于表面贴装与空间受限的电路板设计。品牌标注为 ST(先科)。

主要特性摘要:

  • 晶体管类型:PNP
  • 直流电流增益 hFE:250 @ 100 mA, VCE=1 V
  • 特征频率 fT:80 MHz
  • 集电极最大电流 Ic:500 mA
  • 集射击穿电压 Vceo:45 V
  • 射基击穿电压 Vebo:5 V
  • 集电极截止电流 Icbo:约 100 nA
  • 集射饱和电压 VCE(sat):约 700 mV
  • 耗散功率 Pd:300 mW(SOT-23 封装)

二、电气性能要点

BC807-40 在中等电流工作点(如数十至百毫安级)仍能保持良好增益,hFE 在 100 mA 条件下可达约 250,利于电流放大与驱动应用。低的 Icbo 值(约 100 nA)使其在高阻抗电路或偏置网络中保持较低漏电。fT 约 80 MHz,支持一定带宽的信号放大与快速开关。

器件的 Vceo=45 V 提供了较宽的电压余量,适合低至中压电源系统;Vebo=5 V 则提示基极对发射极的反向耐压有限,布线和测试时需注意基极反向应力。

三、典型应用场景

  • 低功耗便携设备中的信号放大与驱动
  • 逻辑级或模拟开关、反相器与缓冲级
  • 小型继电器或小电流负载的驱动(在额定电流和散热条件下)
  • 通用放大器、偏置电路与电平移位电路

四、封装与引脚信息

封装:SOT-23,适合自动贴装与高密度 PCB 布局。SOT-23 的热性能和耗散能力有限,Pd 标称约 300 mW,实际使用中需考虑 PCB 的铜箔散热、环境温度以及器件热阻对功耗的降额影响。

引脚使用请参照厂商封装图,布线时注意基极和发射极的保护以及避免在基极上施加超过 Vebo 的反向电压。

五、设计与使用注意事项

  • 功率与热管理:SOT-23 的 Pd 为 300 mW,长时间接近额定耗散会导致结温升高并影响可靠性。建议在 PCB 设计中使用散热铜箔并进行热降额设计。
  • 饱和与开关性能:VCE(sat) 约 700 mV,驱动低电压负载时需考虑饱和压降带来的功率损耗与电压损耗。
  • 极限参数遵循:在靠近 Ic=500 mA 或 Vce=45 V 的极限条件下,器件应短时使用并避免持续工作以保障寿命。
  • 静电与基极保护:基极对发射极的击穿电压较低(Vebo=5 V),在调试和装配过程中应采取 ESD 防护与避免反向电压过高。

六、包装与品牌信息

BC807-40 以 SOT-23 小封装提供,适合表面贴装生产流程。品牌标注为 ST(先科)。实际采购与设计时建议参阅厂商最新版规格书以获取完整引脚图、典型电路、最大额定值、热阻及典型特性曲线,确保设计满足器件工作条件。

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