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ST MMBT4401 transistor MMBT4401
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ST MMBT4401
- Type
- ST
- Minimum package
- 3000
Technical parameters
- Electronic Component
- ST
- Electronic Component
- MMBT4401
- Electronic Component
- 1
- Package
- TO-236
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.028g
- Electronic Component
- 1
- Electronic Component
- BM0257315568
- Transistor Type
- NPN
- Frequency(f T)
- 250MHz
- Power Dissipation(Pd)
- 300mW
- Electronic Component
- 3000
- Collector Current(Ic)
- 600mA
- Current (h FE)
- 100
- Voltage(Vebo)
- 6V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MMBT4401 产品概述
一、概述
MMBT4401 是 ST(先科) 推出的 NPN 小信号晶体管，采用 TO-236（SOT-23）封装，面向便携式与板级通用电子电路。器件具有 40V 的集-射极击穿电压和最高 600mA 的集电极电流能力，适用于低功率开关、驱动与高频小信号放大场合。
二、主要电气参数
- 晶体管类型：NPN
- 集电极电流 Ic：600 mA（最大）
- 集-射极击穿电压 Vceo：40 V
- 最大耗散功率 Pd：300 mW（参考封装与散热条件）
- 直流电流增益 hFE：100 @ Ic = 150 mA, Vce = 1 V（典型）
- 特征频率 fT：250 MHz（高频特性良好）
- 集电极截止电流 Icbo：100 nA（典型，低漏电）
- 集电极饱和电压 VCE(sat)：750 mV（典型）
- 射-基极击穿电压 Vebo：6 V
三、特性亮点
- 小封装、占板面积小，适合表贴制造与高密度电路板。
- fT 达 250 MHz，适用于从音频到射频的宽频段小信号放大。
- 低漏电（Icbo ≈ 100 nA）利于低静态电流电路设计。
- 在 150 mA 工作点 hFE 约 100，便于作为中等电流放大与驱动级使用。
四、典型应用
- 小信号放大（前置放大、射频低增益级）
- 逻辑/微控制器输出驱动与电平移位
- 继电器、LED、光耦等元件的开关驱动（需注意耗散与热管理）
- 消费电子、仪器仪表、通信终端等通用场合
五、使用与热管理建议
- Pd = 300 mW 为器件在标准条件下的最大耗散，实际应用应考虑 PCB 铜箔面积、环境温度和热阻（RthJA），必要时增加散热铜箔或改用更大封装。
- 开关工作时，确保有足够的基极驱动电流：Ib ≈ Ic / hFE（按实际工作 hFE 余量设计），并加限流电阻控制基极电流。
- 驱动感性负载时并联钳位二极管或 RC 抑制网络，保护晶体管免受高压尖峰损伤。
- 注意焊接曲线与 ESD 防护，储存与回流焊工艺遵循厂商数据手册建议。
六、选型与替代建议
如需更高功耗或更大集电极电流，可考虑更大封装（如 TO-92、SOT-223）或功率晶体管；若需要更低饱和压或更高频率，可对比其他型号并参考厂商完整参数表。
总结：MMBT4401 在 SOT-23 小封装中提供了 40V/600mA 的良好性能和 250MHz 的频率响应，是通用小信号放大与开关应用的可靠选择。详细引脚定义、热阻和测试条件请以 ST 官方数据手册为准。
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