WMSIC Electronic Components

ST 1N4747APF-M Zener diode 1N4747APF

Model1N4747APF-M
PackageDO-41
BrandST
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
ST 1N4747APF-M
Type
ST
Minimum package
2500 盒

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ST
Electronic Component
1N4747APF-M
Electronic Component
1
Package
DO-41
Electronic Component
Zener Diode
Electronic Component
0.224g
Electronic Component
1
(Zzk)
750Ω
(Zzt)
22Ω
Electronic Component
BM0264879486
Diode
1
Power Dissipation(Pd)
1W
Electronic Component
19V~21V
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

1N4747APF-M 稳压二极管产品概述

一、产品基本信息

1N4747APF-M是ST(先科) 品牌推出的轴向引线稳压二极管,采用DO-41封装,符合无铅环保工艺要求。该器件专为小功率电路的电压稳定、基准参考及过压保护设计,型号中“APF-M”明确标识无铅版本,适配现代电子产品的环保合规需求。DO-41封装为常规轴向通孔封装,引线直径适配常规PCB焊盘,安装便捷,适合大多数电路的焊接工艺。

二、核心电性能参数

1N4747APF-M的核心参数清晰定义了其应用边界与性能表现:

  • 稳压值:标称值20V,实际稳压范围19V~21V,覆盖常规电路对20V级稳压的需求,范围参数可指导电路容差设计;
  • 反向漏电流(Ir):反向偏置电压15.2V时,漏电流仅5uA,低漏电流特性适合低功耗场景,减少静态功耗损失;
  • 最大耗散功率(Pd):额定值1W,明确器件允许的最大功率损耗,实际需结合降额原则使用;
  • 动态阻抗:包含Zzt=22Ω(典型测试条件下的动态阻抗)与Zzk=750Ω(特定测试条件),其中22Ω的低动态阻抗是核心优势——阻抗越小,负载/输入电压波动时,稳压值波动越小,稳压性能更稳定。

三、封装与可靠性

DO-41封装是稳压二极管的经典形式,具有以下特点:

  • 机械特性:轴向引线设计,器件体积小巧(直径约2.7mm,长度约4.5mm),节省PCB空间,适配常规焊盘;
  • 可靠性:ST品牌成熟工艺确保产品一致性好,长期工作稳定性高;无铅工艺符合RoHS 2.0标准,避免铅污染,适配出口及高端产品;
  • 热特性:结合1W功耗,建议在小功率场景(如负载电流≤50mA,20V×50mA=1W)使用,避免长时间满功耗运行导致过热。

四、典型应用场景

1N4747APF-M因20V稳压值、1W功耗及低动态阻抗,广泛应用于:

  1. 小功率电源稳压:作为线性电源输出稳压管,稳定直流输出20V,适配单片机、传感器等小功率负载供电;
  2. 基准电压源:为运放、ADC、DAC等模拟电路提供20V基准,低动态阻抗确保基准受负载变化影响小;
  3. 过压保护:并联在电路输入端或敏感器件前端,电压超20V时击穿导通,限制峰值在19V~21V,保护后级器件;
  4. 信号钳位:在模拟信号传输中钳位幅度≤20V,防止射频/脉冲信号过冲损坏接收电路。

五、选型与使用注意事项

为确保长期可靠工作,需注意:

  1. 降额使用:最大功耗1W为极限值,实际建议按80%降额(≤0.8W),可通过串联限流电阻控制电流(如R≥(Vin-Vz)/40mA);
  2. 反向偏置范围:电压需控制在19V~21V稳压范围,避免长期低于15.2V(无稳压作用)或高于21V(过压损伤);
  3. 负载匹配:负载电阻不宜过小(如≥500Ω),防止电流过大导致功耗超标;
  4. 焊接工艺:烙铁温度≤350℃,焊接时间≤3秒,避免高温损伤内部结构。

总结

1N4747APF-M作为ST经典稳压二极管,以20V稳压、1W功耗、低动态阻抗及DO-41封装的优势,成为小功率电路稳压、基准及保护的常用器件,适用于消费电子、工业控制、通信等领域的常规电路设计。

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