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ST 1N4448W diode 1N4448W
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ST 1N4448W
- Type
- ST
- Minimum package
- 3000
Technical parameters
- Electronic Component
- ST
- Electronic Component
- 1N4448W
- Electronic Component
- 1
- Package
- SOD-123
- Electronic Component
- Switch Diode
- Electronic Component
- 0.028g
- Electronic Component
- 1
- Electronic Component
- BM0232256322
- Current
- 150mA
- Diode
- Electronic Component
- Current(Ir)
- 100nA@80V
- (Vf)
- 720mV@5mA
- Power Dissipation(Pd)
- 400mW
- Electronic Component
- 3000
- Voltage Rating(Vr)
- 80V
- (Trr)
- 4ns
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
1N4448W 产品概述
1N4448W 是一款高性能的开关二极管，广泛应用于各类电子电路中。作为独立式二极管，它具有优秀的电气特性，使其在高速开关和信号整流应用中表现出色。其主要参数包括反向恢复时间 (trr) 为 4ns，反向电流 (Ir) 为 100nA@80V，整流电流可达 150mA，以及正向压降 (Vf) 为 720mV@5mA，直流反向耐压 (Vr) 为 80V。这些参数使得 1N4448W 成为高效、可靠的电子元器件选择。
电气特性
1N4448W 的反向恢复时间非常短，仅为 4 纳秒，这使其非常适合高频开关电路和快闪信号处理。低反向电流 (Ir) 特性为 100nA@80V，意味着其在正常工作条件下能有效降低功耗，适合用于节能设计。此外，该二极管的正向压降为 720mV@5mA，相对较低的压降能够减少功耗，提高整体电路的能效。
整流电流（150mA）为此元器件提供了良好的负载能力，确保其能够处理较高的电流负载而不至于超出其工作范围。这使得 1N4448W 非常适用于输出需要高电流整流的电子产品及电源电路中。其直流反向耐压 (Vr) 达到 80V，能够有效隔离高压电路，保护后端电路避免受到损坏。
封装与应用
1N4448W 采用 SOD-123 封装，这种小型化的封装方式不仅节省了空间，还方便了在自动化生产线上的组装。SOD-123 封装的特点是具有较好的散热性能，使元器件能够在较高的功率下安全工作，同时又保证了长期的可靠性和稳定性。
该元器件常见的应用场景包括：
- 开关电路：因其优异的反向恢复特性，特别适用于开关电源、DC-DC 转换器中的开关元件。
- 信号整流：用于低功耗电路中，将交流信号整流为直流信号，尤其是在高频信号处理场合。
- 反向保护：在电气系统中用作反向电流保护，以保障电路的安全性和稳定性。
- 保护电路：作为电子元件的保护措施，防止因电压反向引起的元器件损坏。
结论
综合来看，1N4448W 是一款性能卓越、应用广泛的开关二极管，凭借其优良的电气特性和小型封装，成为现代电子设计中不可或缺的元器件之一。在高速开关、信号整流及保护电路等应用领域，1N4448W 展现出其优异的性能与可靠性，为设计师提供了更多设计自由度与灵活性。在选择开关二极管时，1N4448W 无疑是一个值得考虑的优秀选项。
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