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ST BC846C transistor BC846C
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ST BC846C
- Type
- ST
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ST
- Electronic Component
- BC846C
- Electronic Component
- 1
- Package
- TO-236
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.027g
- Electronic Component
- 1
- Electronic Component
- BM0257710327
- Transistor Type
- NPN
- Frequency(f T)
- 300MHz
- Power Dissipation(Pd)
- 300mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Collector Current(Ic)
- 100mA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BC846C 产品概述
一、概述与关键参数
BC846C 是一款 NPN 小信号晶体管（封装：TO-236），适用于低功耗、小信号放大与开关场合。主要电气参数包括：最大集电极电流 Ic = 100mA、集—射极击穿电压 Vceo = 65V、耗散功率 Pd = 300mW、直流电流增益 hFE = 420（在 Ic≈2mA、Vce≈5V 条件下）、特征频率 fT = 300MHz、集电极截止电流 Icbo ≈ 15nA、饱和电压 VCE(sat) ≈ 600mV、基—发射击穿 Vebo = 6V。品牌标注为 ST（先科）。
二、主要特性与优势
- 高增益：在低电流工作点（~2mA）下 hFE 可达数百，便于构建高增益放大级或小信号前置放大器。
- 宽电压余量：Vceo=65V 允许在较高电压侧工作，适合与较高电压供电系统配合使用。
- 高频性能良好：fT=300MHz 使其在 VHF 及较高频率小信号放大应用中也具备可用性。
- 低漏电流：Icbo 约 15nA，适合低电流偏置和高输入阻抗场合。
三、典型应用场景
- 小信号放大器（前置、音频预放）与电压跟随器。
- 低电流开关与驱动（驱动小继电器、LED 或逻辑接口）。
- 电流镜、偏置源与传感接口电路。
- 高频小信号处理与射频前端的低功耗级放大（需按频率和布局优化）。
四、设计注意事项
- 功耗限制：Pd=300mW，Pd = Vce × Ic。例如若 Ic 接近 100mA，则允许的 Vce 仅约 3V，需避免同时达到高电压与大电流。
- 散热与温度：TO-236 为小封装，散热受限；应考虑版面铜箔散热与适当的热降额策略，避免长期高负载运行。
- 基极电压限制：Vebo = 6V，基—发射间电压不可超过此值以免损坏结。
- 饱和状态：VCE(sat) 约 600mV（典型），做低压开关时应考虑压降和功耗。
五、实用建议与封装信息
- 若用于放大电路，建议在 Ic=1–5mA 范围内偏置以兼顾噪声、线性与增益。
- 对于开关用途，若需更低饱和压或更高功率，请考虑并联、改用更大封装或外加散热措施。
- 封装为 TO-236（SOT-23 类似小表贴），适合表面贴装生产工艺与高密度板设计。
以上为 BC846C 的概览与实用设计建议，供电路选型与布局时参考。若需具体电路示例或与其他型号的对比分析，可提供使用场景，我再给出更针对性的设计方案。
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