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ST MMBT5551 transistor MMBT5551
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ST MMBT5551
- Type
- ST
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ST
- Electronic Component
- MMBT5551
- Electronic Component
- 1
- Package
- TO-236
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.028g
- Electronic Component
- 1
- Electronic Component
- BM0209688650
- Transistor Type
- NPN
- Frequency(f T)
- 100MHz
- Power Dissipation(Pd)
- 350mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Collector Current(Ic)
- 600mA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MMBT5551 产品概述
一、产品简介
MMBT5551 是一款高压小信号 NPN 晶体管，来自 ST（先科）品牌，封装为 TO-236（即 SOT-23 形式）。器件针对需要较高集电极-发射极耐压与较好开关/放大性能的便携与板载应用而设计，兼顾低漏电、适度电流驱动和较高频率响应。
二、主要特点
- 晶体管类型：NPN
- 集电极-发射极击穿电压 Vceo：160 V
- 直流电流增益 hFE：80（在 Ic = 10 mA、Vce = 5 V 条件下）
- 特征频率 fT：100 MHz（反映小信号放大带宽潜力）
- 集电极电流 Ic：600 mA（请参考数据手册，连续与脉冲能力受封装和散热限制）
- 集电极截止电流 Icbo：50 nA（低漏电，利于高阻态精密电路）
- 集射极饱和电压 VCE(sat)：200 mV（典型值）
- 耗散功率 Pd：350 mW（TO-236 封装条件下）
- 射基极击穿电压 Vebo：6 V
三、电性能要点
MMBT5551 在中高压场合表现出色：Vceo 160 V 能够满足电源保护、隔离型开关及高电压小信号放大等需求。hFE ≈ 80 在中等工作点（10 mA）下提供良好增益，fT ≈ 100 MHz 表明可用于几十 MHz 范围内的放大或高速开关应用。低漏电 Icbo（50 nA）适合对漏电敏感的高阻态电路。注意 Vebo = 6 V，基极-发射极反向电压应严格控制，避免击穿。
四、典型应用
- 高压开关与电平转换（小信号到中等负载驱动）
- 高压保护电路（过压检测、断路限流）
- 中低功率放大器：前级放大、射极跟随、信号整形
- 高频开关与脉冲电路（受限于封装散热）
- 仪表与测量电路中需要低漏电和高耐压的场合
五、设计与布板建议
- 封装耗散 Pd = 350 mW，工作时需在 PCB 上做好散热设计：增大焊盘铜箔、使用热过孔将热量传导至后层大铜面。高电流或连续功率场合应按器件热阻和环境温度做降额处理。
- 基极驱动：为保证饱和与关闭的可控性，应设置合适的基极限流电阻，避免基极反向电压超过 6 V。
- 开关时注意栅极/基极寄生电容与寄生电感对切换速度的影响，适当增加阻尼或 RC 缓冲减小振铃。
- 布局中将高压回路与敏感低压信号分离，走线尽量短而宽，减少寄生电阻和噪声耦合。
六、可靠性与注意事项
- 器件对静电敏感，建议在装配与测试时采取 ESD 防护措施。
- 保存与焊接时遵循厂家回流焊温度曲线，避免超时高温导致结点损伤。
- 在实际设计中，若工作点接近最大额定值（Vceo、Ic、Pd），应咨询数据手册并做热仿真与寿命评估。
总结：MMBT5551（ST/先科，TO-236）是一款适用于需要高耐压、低漏电和中频性能的 NPN 小信号晶体管。合理的散热与偏置设计能够发挥其在高压开关与中频放大电路中的优势。若需精确极限参数与典型特性曲线，请参阅厂商完整数据手册。
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