WMSIC Electronic Components

ST 1N4731APF Zener diode 1N4731APF

Model1N4731APF
PackageDO-41
BrandST
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
ST 1N4731APF
Type
ST
Minimum package
250 袋

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ST
Electronic Component
1N4731APF
Electronic Component
1
Package
DO-41
Electronic Component
Zener Diode
Electronic Component
0.223g
Electronic Component
1
(Zzk)
400Ω
(Zzt)
9Ω
Electronic Component
BM0259564329
Diode
1
Current(Ir)
50uA@1V
Power Dissipation(Pd)
1W
Electronic Component
4.09V~4.52V
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

1N4731APF 产品概述

一. 概要介绍

1N4731APF 是一款额定耗散功率为 1W 的硅稳压二极管,标称稳压值 4.3V,属低压齐纳(Zener)器件,常用于局部稳压、过压保护和参考电压源。品牌为 ST(先科),封装为常见塑料轴向 DO-41,便于穿孔板和波峰焊装配。

二. 主要电气参数

  • 稳压值(标称):4.3V
  • 稳压值范围:4.09V ~ 4.52V(表征器件容差与工艺变动)
  • 反向电流 Ir:50 μA @ 1V(低电压下的漏电特性)
  • 耗散功率 Pd:1W(器件在规定冷却条件下的最大耗散)
  • 动态阻抗 Zzt:9 Ω(在测量点/测试电流附近,对应稳压下的交流等效内阻)
  • 跃降阻抗 Zzk:400 Ω(在击穿开始区域,低电流下电压随电流变化剧烈时的阻抗)

三. 性能解读与工程含义

  • 稳压精度:4.09–4.52V 的范围表示典型器件在指定测试条件下允许的偏差,设计时应按最坏情况选用(例如按 4.09V 或 4.52V 计算电路容差)。
  • 动态阻抗影响负载响应:Zzt=9Ω 意味着当工作电流变化时,稳压点会有 ΔV ≈ 9Ω × ΔI 的变化,若负载电流波动较大需考虑更大的滤波或缓冲。
  • 打开区域(Knee)特性:Zzk 高达 400Ω 表明在极低电流下(接近击穿起始)电压对电流非常敏感,若电路常在微安级工作,稳压特性不稳定,应提高工作电流到设备规定的测量点附近。

四. 热管理与工作电流估算

理论上最大电流可由 Pd / Vz 估算:Imax ≈ 1W / 4.3V ≈ 232 mA。但这是在理想散热条件下的理论值,实际连续工作必须有余量并考虑结温限制与散热条件。建议:

  • 使用限流电阻或恒流源限制流经齐纳的电流,避免长时间接近 Pd 极限。
  • 在较高环境温度或密集布板场合进行功率降额(一般建议 50% 以内的安全工作功率)。
  • 对于脉冲或瞬态浪涌,可参考器件脉冲能力并保证平均功率不超过 Pd。

五. 典型应用场景

  • 小功率参考电压源:在传感器或模拟电路中为放大器或比较器提供稳定参考电压。
  • 过压保护:与串联限流电阻配合,保护低压侧电路免受瞬态过压。
  • 电平钳位与浪涌吸收:在信号线或电源线上限制峰值电压。

六. 使用建议与注意事项

  • 若需要更好的稳压精度,可并联通过小电容进行滤波,或使用稳压芯片替代。
  • 避免在击穿拐点附近长期工作(极低电流区),应保证工作电流在器件测试利于稳压特性的范围内。
  • 焊接时注意封装热敏性,避免长时间过热影响器件特性。
  • 对关键应用建议评估器件的温漂、长期稳定性以及在目标温度范围内的参数变化。

以上为 1N4731APF 的产品概述与工程使用建议,适用于快速选型与电路设计前的性能评估。若需典型曲线、测试电流点或更详细的热阻与最大反向电压数据,可参考原厂完整规格书以获得准确的工程数据。

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