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ST 2N3906 transistor 2N3906
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ST 2N3906
- Type
- ST
- Minimum package
- 1000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ST
- Electronic Component
- 2N3906
- Electronic Component
- 1
- Package
- TO-92
- Electronic Component
- 1 PNP
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.154g
- Electronic Component
- 1
- Electronic Component
- BM0232256312
- Transistor Type
- PNP
- Frequency(f T)
- 250MHz
- Power Dissipation(Pd)
- 625mW
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
- Collector Current(Ic)
- 200mA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2N3906 产品概述
一、产品简介
2N3906 是一款通用小信号 PNP 双极型晶体管，由 ST（先科）等厂家提供，常见封装为 TO-92。该器件定位为低功耗、高频率的小信号放大与开关元件，适合消费电子、传感器接口和功率不大的驱动场合。
二、主要电气特性
- 晶体管类型：PNP
- 集射极击穿电压 Vceo：40 V
- 集电极电流 Ic（最大）：200 mA
- 耗散功率 Pd（封装 TO-92）：625 mW（环境与散热条件相关）
- 集电极截止电流 Icbo：50 nA（典型，低泄漏利于小信号）
- 射基极击穿电压 Vebo：6 V（注意不要反向超限）
- 特征频率 fT：约 250 MHz（适合高频小信号放大）
- 集射极饱和电压 VCE(sat)：约 400 mV（在 50 mA 与 5 mA 条件下给出）
三、封装与机械特性
标准 TO-92 直插封装，体积小、便于手工焊接和面包板试验。安装时注意散热受限，额定 Pd 在无良好散热条件下不能长期满载使用。
四、典型性能与应用场景
2N3906 适用于小信号放大、高频前级、低功耗开关和高侧驱动。高 fT 与低 Icbo 使其在射频/模拟前端与低噪声放大器中表现良好。作为 PNP 器件，它常与 NPN（如 2N3904）配对用于互补推挽、对称放大与电平转换。
五、使用注意事项与热设计
- 避免基极–射极反向电压超过 6 V。
- 虽然 Ic 最大可达 200 mA，但在高 Vce 条件下受耗散功率限制；例如在 Vce=10 V 时，理论最大 Ic≈62 mA（Pd/Vce），实际应留裕量。
- TO-92 封装散热能力有限，长时间高电流或高 Vce 工况需增加外部散热或降额使用。
- 在开关应用中注意 VCE(sat) 及基极驱动电流以降低饱和损耗。
六、典型电路提示
- 高侧开关：PNP 发射接正电源，集电极接负载，基极通过限流电阻拉低以导通。
- 小信号放大：常用共基或共发配置，配合偏置网络与耦合电容实现交流放大。
- 与 2N3904 配对可构成互补对，适用于低功率音频或驱动电路。
总结：2N3906（ST）为一款可靠的 TO-92 封装 PNP 小信号晶体管，具有 40 V 耐压、200 mA 电流能力、250 MHz 特征频率及 625 mW 耗散功率，适合多种低功耗放大与开关场合，使用时应重视热管理与基极/射极电压限制。
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