WMSIC Electronic Components

ST 1N5819W Schottky diode 1N5819W

Model1N5819W
PackageSOD-123FL
BrandST
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
ST 1N5819W
Type
ST
Minimum package
3000

Technical parameters

Electronic Component
ST
Electronic Component
1N5819W
Electronic Component
1
Package
SOD-123FL
Electronic Component
Schottky Diode
Electronic Component
0.02g
Electronic Component
1
Electronic Component
BM0264921238
Current
1A
Diode
1
Current(Ir)
1mA@40V
(Vf)
600mV@1A
Electronic Component
55℃~+125℃
Electronic Component
3000
Voltage Rating(Vr)
40V
Surge Current (Ifsm)
25A

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

1N5819W 产品概述

一、产品简介

1N5819W 是一款用于通用整流和保护的肖特基二极管,由 ST(先科)生产并以 SOD-123FL 小封装提供。它在工作电流为 1A 时具有较低的正向压降(Vf≈600mV@1A),反向耐压为 40V,适合在低压电源、保护和整流等场景中替代普通硅二极管以降低导通损耗和开关损耗。

二、主要电气参数(关键值)

  • 二极管配置:1个独立式(单向肖特基二极管)
  • 正向压降:Vf = 600mV @ 1A
  • 直流反向耐压:Vr = 40V
  • 整流电流:IF = 1A(额定连续电流)
  • 反向电流:Ir = 1mA @ 40V
  • 非重复峰值浪涌电流:Ifsm = 25A(一次性脉冲冲击能力)
  • 工作结温范围:-55℃ ~ +125℃
  • 封装:SOD-123FL(小型表面贴装)

这些参数表明 1N5819W 在 40V 以下的低压电源和保护应用中表现平衡,既兼顾低压降又能承受一定的浪涌冲击。

三、主要特点与优势

  • 低正向压降:在 1A 工作电流下约 0.6V,能降低导通损耗,减少功耗和发热,相较于普通硅整流器在低压系统中更有优势。
  • 快速开关响应:肖特基结构固有的无恢复时间(或极短恢复时间)适合开关电源和高频整流场合。
  • 小型封装:SOD-123FL 体积小,适合高密度 PCB 布局和便携设备。
  • 良好的浪涌承受力:25A 的单次峰值浪涌能力可处理启动或短时间冲击电流。
  • 宽工作温度范围:适用于工业级-55~+125℃环境。

四、典型应用场景

  • 开关电源二次整流和续流二极管(低压、小电流场合)
  • USB、移动电源、充电器等便携设备的整流与反向保护
  • 电池和电源线路的反接保护、肖特基 OR-ing(并联备份)
  • 低压 DC-DC 转换器、功率管理模块的输出整流
  • 作为钳位或箝位二极管以抑制瞬态电压尖峰

五、使用注意与设计建议

  • 热管理:在 1A 连续工作下,正向压降约 0.6V,器件自身功耗约为 0.6W;在实际 PCB 设计中需预留足够的铜箔面积或热通孔以帮助散热,避免长期满负荷运行导致结温过高。
  • 浪涌与安全裕度:Ifsm = 25A 表示短脉冲能承受较大冲击,但不等同于长期过载能力。频繁的冲击或高能量浪涌需选用更大规格或并联设计,同时保证热散能力。
  • 反向漏电:Ir 在 40V 时可达 1mA,若电路对漏电敏感(如超低功耗待机),应注意反向电流对系统待机能耗的影响,必要时选用低漏电肖特基或普通硅二极管。
  • 焊接与可靠性:遵循厂家推荐的回流焊温度曲线进行焊接;避免超过器件最高允许结温与非正常热循环。器件应在正常防潮、静电防护条件下存放与装配。
  • 布局建议:在做反向保护或整流时,尽量将二极管靠近受保护元件或输入端放置,最小化走线电感与电阻,有利于降低压降和电磁干扰。

六、与其它方案的比较与选型建议

若应用对正向压降和漏电流有更高要求,可考虑同类低 Vf 且低 Ir 的肖特基产品或更高电压等级的型号。若工作电流显著大于 1A,应选择额定电流更高、封装热阻更小的器件。本产品适合在 40V 以下、1A 级别、对体积与开关性能有要求的场合使用。

七、结论

1N5819W(ST/先科,SOD-123FL)是一款在 40V/1A 级别具备良好平衡性能的肖特基二极管,具有较低的正向压降、快速响应和紧凑封装,适用于开关电源整流、反向保护和便携设备等多种低压电源应用。设计时需关注热管理与反向漏电对系统待机功耗的影响,并按厂家工艺规范进行焊接与安装,以保证长期可靠性。

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