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Slkor 2N7002E
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Slkor 2N7002E
- Type
- SLKOR
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SLKOR
- Electronic Component
- 2N7002E
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.036g
- Electronic Component
- 1
- Electronic Component
- BM0227676397
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 225mW
- Gate Voltage(Vgs)
- ±20V
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2N7002E 产品概述
一、产品简介
2N7002E 是一款单个 N 沟道增强型 MOSFET，封装为常用的 SOT-23，品牌为 Slkor（萨科微）。器件关键参数：漏源耐压 Vdss=60V，导通电阻 RDS(on)=3.5Ω（Vgs=5V），阈值电压 Vgs(th)=2.5V（Id=250µA），额定连续漏极电流 Id=300mA，耗散功率 Pd=225mW，工作温度范围 -55℃ ~ +150℃。该器件体积小、耐压较高，适合轻负载开关与电平转换场合。
二、主要特性
- 60V 耐压，适合中低电压系统开关。
- 逻辑电平驱动，在 Vgs=5V 时导通电阻为 3.5Ω。
- SOT-23 小封装，便于表面贴装和空间受限的电路板设计。
- 宽工作温度范围，满足工业级环境需求。
三、典型应用
- 小功率低侧开关与负载驱动（继电器驱动需注意电流与功耗限制）。
- 逻辑电平电平转换及接口隔离。
- 输入保护、上拉/下拉实现、信号整形与快速开关场景。
- 低速模拟开关或电平检测电路（受限于导通电阻）。
四、设计与使用注意事项
- 虽然额定 Id 标示 300mA，但在 SOT-23 且 Pd=225mW 的条件下，器件的持续大电流能力受限。按 RDS(on)=3.5Ω 计算，300mA 时器件自身功耗约 315mW，已超过 Pd，需避免长时间满载。推荐在 PCB 上增加铜箔散热或限制电流、采用脉冲工作方式。
- Vgs(th) 在 2.5V（250µA）左右，意味着在 3.3V 驱动下导通性能有限，若需较低 RDS(on) 应使用 5V 驱动或选用更低导通阻抗的器件。
- 注意寄生电容与开关损耗，对高频开关应做驱动与缓冲设计。
- 保护二极管、栅极限流与静电防护有助提升可靠性。
五、封装与引脚
SOT-23 三引脚：1-G（栅极），2-D（漏极），3-S（源极）。常见 PCB 布局为漏极与源极周围留足铜箔以改善散热。
六、结论
2N7002E（Slkor）是一款面对轻载、小体积、要求中等耐压场景的通用 N 沟 MOSFET。合理评估导通损耗与散热条件后，可在开关、逻辑电平转换及信号处理等应用中发挥良好性价比。
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