WMSIC Electronic Components

Slkor DB207S

ModelDB207S
PackageDBS
BrandSLKOR
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Slkor DB207S
Type
SLKOR
Minimum package
1500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SLKOR
Electronic Component
DB207S
Electronic Component
1
Package
DBS
Type
Electronic Component
Electronic Component
Bridge Rectifier
Electronic Component
0.555g
Electronic Component
1
Electronic Component
BM0226546186
Current
2A
Current(Ir)
10uA@1kV
(Vf)
1.1V@2A
Electronic Component
55℃~+150℃
Electronic Component
Electronic Component
Electronic Component
1500

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

DB207S 产品概述

一、概述

DB207S 为单相整流桥(单相全波),由四只硅整流二极管组成,适用于中高压直流整流场合。品牌:Slkor(萨科微),封装:DBS。该器件在工业级结温范围内工作可靠,适配多种电源及高压整流系统。

二、主要性能参数

  • 工作结温范围:-55℃ ~ +150℃
  • 直流反向耐压(Vr):1000 V
  • 正向压降(Vf):1.1 V @ IF = 2 A
  • 持续整流电流:2 A
  • 非重复峰值浪涌电流(Ifsm):60 A
  • 反向电流(Ir):10 μA @ Vr = 1 kV
  • 类型:单相整流桥

上述参数表征了在额定条件下的核心电气性能,特别是在高压工况下的反向耐压与低反向漏电流,使其适合高压直流设备的整流任务。

三、结构与封装

DB207S 采用 DBS 封装,结构紧凑,有利于在PCB上完成桥式整流布局。器件由四只二极管形成桥式连接,两个交流端(~)输入,正负输出分别为 +、-。封装便于波峰/回流焊接与机械安装,适合标准表面贴装或通孔混合工艺(请参照完整封装图纸与焊接规范)。

四、典型应用场景

  • 交流到直流的电源模块与整流电路
  • 高压电源、测量设备与高压驱动电源
  • 工业控制、电机驱动前端整流
  • 充电与充电站电源前端(视系统要求作降额)
  • 各类需耐高压、漏电小的整流场合

五、设计与使用建议

  • 散热:尽管额定整流电流为2 A,长时间工作时应通过扩大PCB散热铜箔或加装散热片降低结温,避免靠近150℃上限长期运行。
  • 冲击电流:Ifsm = 60 A 可处理短时冲击,但仍建议在电路中加入浪涌抑制(如限流器、NTC、熔断器或TVS)以提高可靠性。
  • 漏电流与高压应用:反向漏电仅 10 μA@1 kV,适用于高压场合,但高压系统仍需良好绝缘与爬电距离设计。
  • 布局:交流输入端与滤波电容应尽量靠近器件,走线宽且短,减小寄生电感与发热集中。
  • 降额:在高温或散热受限条件下建议对额定电流进行降额处理(参考系统热设计)。

六、可靠性与测试要点

推荐在设计验证阶段进行峰值浪涌测试、长期老化和高温存储/循环试验以确认在目标工况下的稳定性。高压应用应增加绝缘与耐压测试,关注反向漏电随温度上升的变化。

七、采购与替代

DB207S 由 Slkor(萨科微)出品,购买前请确认封装标识与测试报告。若需替代器件,应匹配关键参数:Vr≥1kV、Ifsm≥60A、整流电流约2A及相近的正向压降与结温范围。

备注:本文基于给定关键参数编写,更多电气特性、封装尺寸与焊接曲线请参阅厂家完整数据手册以便于最终设计验证。

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