WMSIC Electronic Components

Slkor 2SC4617

Model2SC4617
PackageSOT-523
BrandSLKOR
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Slkor 2SC4617
Type
SLKOR
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SLKOR
Electronic Component
2SC4617
Electronic Component
1
Package
SOT-523
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.022g
Electronic Component
1
Electronic Component
BM0230012848
Operating Temperature
55℃~+150℃
Transistor Type
NPN
Frequency(f T)
180MHz
Power Dissipation(Pd)
125mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

2SC4617 产品概述

2SC4617 是萨科微(Slkor)出品的一款小信号 NPN 双极型晶体管,适用于便携式电子、信号放大与高速开关等场合。器件采用超小封装 SOT-523,单只供应,定位为低电流、低功耗但具有较高频率特性的通用 NPN 元件。

一、主要特性

  • 晶体管类型:NPN(硅)
  • 集电极电流(Ic):最大 100 mA
  • 集—射击穿电压(Vceo):50 V
  • 功耗耗散(Pd):125 mW(器件热限需严格考虑)
  • 直流电流增益(hFE):典型 560 @ Ic=1 mA, VCE=6 V
  • 特征频率(fT):典型 180 MHz
  • 集电极截止电流(Icbo):典型 500 nA
  • 集电极饱和电压(VCE(sat)):最大 400 mV @ IC=60 mA, IB=5 mA
  • 射—基击穿电压(Vebo):5 V
  • 工作结温(Tj):-55℃ ~ +150℃
  • 封装:SOT-523(极小封装,便于高密度安装)
  • 品牌:Slkor(萨科微)

二、典型电气性能解读

2SC4617 在低电流区(≈1 mA)表现出很高的静态增益(hFE≈560),适合用作高增益的前置放大器或偏置稳压回路。fT≈180 MHz 表明其在 VHF 频段仍有一定增益,适用于高频小信号放大与快速数字开关。Icbo 约 500 nA 表明在高阻态或断态时漏电较小,利于低功耗电路。需要注意 Vebo 仅 5 V,须避免反向施加过大基极-发射极电压。

三、封装与热管理

SOT-523 为极小封装,便于在空间受限的电路板上布局,但也限制了散热能力。器件 Pd 为 125 mW,实际使用时须考虑环境温度与 PCB 散热条件,进行功耗降额;建议使用较大面积的铜箔引脚、短走线并避免长期在高 Ic 下工作。详细热阻与降额曲线请参考完整数据手册。

四、典型应用场景

  • 便携式与电池供电设备的小信号放大器
  • 高频前置放大(VHF 范围内)
  • 快速开关与逻辑接口驱动(中小电流)
  • 模拟信号的缓冲与电平转换
  • 低功耗传感器信号调理

五、使用建议与注意事项

  • 由于封装与 Pd 限制,不推荐在接近最大 Ic(100 mA)且持续工作条件下使用;若短时脉冲允许短暂较大电流,但需确认瞬时热容与温升。
  • 在需要饱和导通(开关)时,建议参考数据:IC=60 mA 时 IB≈5 mA 可达到 VCE(sat)≈400 mV,通常采用强制 β(βforced)≈10~12 以保证饱和。
  • 严防基极反向电压超过 5 V,以免损伤基-发结。
  • 在高频应用中需重视布线寄生电容与阻抗匹配,尽量缩短输入/输出走线,靠近地平面布置旁路电容。

六、典型电路与偏置参考

  • 共射放大:在低噪声前级可采用浅偏流(IC≈0.5~2 mA)以发挥高 hFE 的优点,发射电阻用于稳定偏置与温度补偿。
  • 发射跟随器:用作阻抗缓冲以驱动低阻负载或作为电平移位器,注意功耗与温升。
  • 开关驱动:若需要驱动接近 60 mA 的负载,请设计足够基极驱动(≈5~8 mA),并考虑驱动级的电流能力与散热。

总结:2SC4617 在极小封装内提供了高增益与较高的频率响应,适合空间受限且对小信号性能要求较高的应用。但因其功耗与封装热能力有限,设计时必须做好热管理与合理偏置以确保长期可靠工作。欲获得完整参数与典型应用电路,请参考厂商详细数据手册。

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