WMSIC Electronic Components

Slkor MMBT3906

ModelMMBT3906
PackageSOT-23
BrandSLKOR
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Slkor MMBT3906
Type
SLKOR
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SLKOR
Electronic Component
MMBT3906
Electronic Component
1
Package
SOT-23
Electronic Component
1 PNP
Electronic Component
Transistor(BJT)
Electronic Component
0.032g
Electronic Component
1
Electronic Component
BM0227676392
Transistor Type
PNP
Frequency(f T)
300MHz
Power Dissipation(Pd)
300mW
Electronic Component
Electronic Component
Electronic Component
3000
Collector Current(Ic)
200mA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MMBT3906(Slkor 萨科微)产品概述

一、产品概述

MMBT3906 为小信号 PNP 晶体管,封装为 SOT-23,适合表面贴装应用。该器件具备较高的特征频率与适中的电流能力,典型用于小信号放大、高速开关和高端(高侧)驱动场景。关键参数包括:集射极击穿电压 Vceo = 40V,集电极电流 Ic = 200mA,耗散功率 Pd ≈ 300mW,特征频率 fT ≈ 300MHz,基-发反向击穿 Vebo = 6V,集电极截止电流 Icbo ≈ 50nA(典型条件)。

二、主要特点

  • PNP 小信号三极管,单元数量:1,只含一个晶体管单元。
  • 40V 最大集射极耐压,适合中低压电源体系。
  • 200mA 连续集电极电流,能驱动中小负载或作为前置放大使用。
  • fT ≈ 300MHz,良好频率响应,适合几十MHz以内的宽带放大与开关。
  • SOT-23 小封装,节省 PCB 面积,适合便携设备和密集布局。

三、关键电气参数(典要说明)

  • Vceo(集-射极击穿)= 40V:不能超过此电压以免进入击穿区。
  • Ic(最大集电极电流)= 200mA:连续工作时应考虑功耗与温升限制。
  • Pd(耗散功率)≈ 300mW(自由空气、常温、典型 PCB 条件下):实际功耗受 PCB 铜箔和环境温度影响,需热设计。
  • Vebo(基-发反向击穿)= 6V:基极相对于发射极反向电压应受限,以免损伤结。
  • Icbo(集电极截止电流)≈ 50nA:低漏电适合高阻输入或高增益偏置电路。

四、引脚与封装

典型 SOT-23 引脚排列(从器件正面观察、标记朝上、从左到右):1 = E(发射极),2 = B(基极),3 = C(集电极)。不同厂家封装标识可能略有差异,设计前请以厂商数据手册为准。

五、典型应用

  • 高频或宽带小信号放大(射频前端、信号整形)。
  • 高端(高侧)开关与电源管理中的 PNP 驱动元件。
  • 互补推挽电路的 PNP 对应件(配合 NPN MMBT3904/类似器件)。
  • 通用开关、缓冲与电平移位电路。

六、使用建议与注意事项

  • 热管理:300mW 为典型耗散功率上限,实际应用中通过增加 PCB 铜箔尺寸或并联热 vias 降低结温以免热失效。
  • 偏置与稳定:对于放大电路,建议在发射极加入小电阻实现负反馈,提升热稳定性并减少 hFE 变化带来的偏置漂移。
  • 反向电压控制:避免基-发反向电压超过 6V,特别在开关转换或浪涌条件下需加限流或钳位保护。
  • ESD 与处理:属于敏感器件,贴片加工与搬运时注意静电防护与湿度控制。

七、替代与采购建议

常见替代型号包括 2N3906(通孔 TO-92)、其他 SOT-23 封装的 PNP 小信号管(如 BC856 等)。采购时确认器件的电气参数与封装引脚排列,并注意是否需 RoHS/无铅版本以及批次品质要求。

八、总结

Slkor(萨科微)生产的 MMBT3906 在 SOT-23 封装下,提供 40V 耐压、200mA 电流能力与 ~300MHz 的频率特性,适合中低压、高速小信号与高侧驱动应用。设计时需关注热耗散与基-发反向电压限制,并以厂商数据手册为最终依据以确保可靠性与性能匹配。

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