WMSIC Electronic Components

Siproin H7530-1 H7530

ModelH7530-1
PackageSOT-89-3
BrandSIPROIN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Siproin H7530-1
Type
SIPROIN
Minimum package
1000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
50mV@(1mA)
Electronic Component
SIPROIN
Electronic Component
H7530-1
Electronic Component
1
Package
SOT-89-3
Electronic Component
Linear Regulator(LDO)
Electronic Component
0.04g
Electronic Component
1
Electronic Component
BM0227783255
Operating Temperature
40℃~+85℃@(Ta)
Operating Voltage
15V
Output
Electronic Component
Output Voltage
3V
Output Current
150mA
Output Type
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

H7530-1 — 3.0V 固定输出 LDO 线性稳压器(Siproin)

一、产品概述

H7530-1 是上海矽朋(Siproin)推出的一款低功耗、固定输出的线性稳压器(LDO),设计用于为电池供电与低功耗电子设备提供稳定的 3.0V 电压源。器件支持输入最高 15V,最大输出电流可达 150mA,具备短路保护与极低静态电流特性,适合对功耗敏感且需可靠保护的小型电子系统。

二、主要参数

  • 输出类型:固定(3.0V)
  • 最大工作/输入电压:15V
  • 输出电流:最大 150mA
  • 压差(Dropout):50mV @ 1mA(低电流时表现优异,随负载增加压差将上升)
  • 静态电流(Iq):典型 1.5µA(低待机功耗)
  • 保护功能:短路保护
  • 工作温度范围:-40℃ ~ +85℃(Ta)
  • 输出极性:正极输出
  • 通道数:单通道
  • 封装:TO-92-3

三、功能特性亮点

  • 极低静态电流:典型 1.5µA,适合电池供电与长待机应用,延长续航时间。
  • 宽输入电压范围:最高可承受 15V 输入,适配多种电源环境与后级降压需求。
  • 短路保护:在输出短路或过流情况下提供基本保护,提升系统可靠性。
  • 稳定的固定输出:免去外部反馈网络,简化电路设计与调试。

四、封装与引脚说明

  • 封装形式:TO-92-3,便于插装与穿孔板或小批量手工焊接。
  • 引脚功能:三引脚(VIN、GND、VOUT)。为避免封装引脚顺序误用,具体引脚排列请以厂商封装图或样片标识为准。

五、典型应用场景

  • 低功耗便携式设备与传感器(IoT 终端、数据采集模块)
  • 电池管理与备用电源模块(纽扣电池、锂电供电)
  • 工业控制与人机界面低速电路供电
  • 各类消费电子子模块(时钟电路、低速数模电路等)

六、使用注意与热设计

  • 功率耗散计算:P = (VIN - VOUT) × IOUT。举例:若 VIN = 15V、VOUT = 3V、IOUT = 150mA,则 P = 12V × 0.15A = 1.8W,TO-92 封装在无额外散热条件下难以安全耗散此功率,需限制输入电压或外部降压以降低器件发热。
  • 压差随负载增加而上升:标称 50mV 压差是在 1mA 条件下测得,满载(150mA)时压差会显著增加,请在高电流场景测量或参考完整数据手册。
  • 环境温度与散热:在高 Ta 条件下应留足热裕度,必要时采取散热片或改用低压差更大功率能力的封装器件。
  • 短路保护虽然能减小故障风险,但不能替代良好的热设计与熔断措施。

七、典型外部电路与建议元件

  • 输入电容:建议在 VIN 端并联 0.1µF 陶瓷电容以抑制高频干扰,并结合 1µF~10µF 低 ESR 电容以改善瞬态响应(具体数值与 ESR 要求以厂商数据手册为准)。
  • 输出电容:为保证稳压器稳定性与良好瞬态性能,通常需在 VOUT 端并联 1µF~10µF 的低 ESR 陶瓷或钽电容。
  • 布局建议:电容尽量靠近引脚布置,走线短且宽,以减少寄生电感与压降。

八、品质与选型建议

  • 在设计前请索取并核对官方数据手册,确认在目标电流、温度与封装条件下的详细特性曲线(PSRR、噪声、最大压差随电流变化、热阻等)。
  • 对于常在高输入电压与接近最大输出电流工况工作的应用,优先评估散热方案或考虑更大封装/降压组合以保证长期可靠性。
  • 若需量产,请与 Siproin 技术支持确认引脚排列、包装信息与可靠性测试报告。

若需要,我可以根据具体的工作电压/电流/环境温度条件帮您计算功耗与估算封装热负荷,并给出更详细的外部滤波电容与 PCB 布局建议。

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