WMSIC Electronic Components

Siproin SSP5841ED

ModelSSP5841ED
PackageSOIC-16-300mil
BrandSIPROIN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Siproin SSP5841ED
Type
SIPROIN
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SIPROIN
Electronic Component
SSP5841ED
Electronic Component
1
Package
SOIC-16-300mil
Electronic Component
Isolated
Electronic Component
0.606g
Electronic Component
1
CMTI(kV/us)
50kV/us
Features
Output
Electronic Component
BM0227161854
Operating Temperature
40℃~+125℃
Output
Level
Channel Count
1
Channel Count
3
(tpd)
9ns

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SSP5841ED 产品概述

SSP5841ED 是 Siproin(上海矽朋)推出的一款四通道数字隔离器,采用 SOIC-16-300mil 封装,面向需要中高速、低延迟且高抗干扰能力的隔离数字通信和信号传输场景。器件具备三路正向通道与一路反向通道,出厂默认输出为高电平,提供高达 6000 Vrms 的强化绝缘等级和 50 kV/μs 的共模瞬态抗扰度(CMTI),工作温度范围覆盖 -40 ℃ 到 +125 ℃,适用于工业级应用环境。

一、主要性能亮点

  • 最大数据速率:150 Mbps(简洁高带宽,满足多数高速数字接口需求)
  • 默认输出状态:高电平(上电或失电时提供确定的逻辑状态,有利于系统容错)
  • 隔离电压(Vrms):6000 Vrms(强化隔离等级,适合高差分电压场景)
  • 正向/反向通道:3 路正向、1 路反向(适配单向与一条回传链路的混合信号拓扑)
  • 传播延迟(tpd):典型 9 ns(低延迟,有利于时序敏感型接口)
  • 共模瞬态抗扰度(CMTI):50 kV/μs(对快速瞬态共模干扰有良好抑制)
  • 供电电压范围:
    • VCCA: 2.5 V ~ 5.5 V
    • VCCB: 2.5 V ~ 5.5 V (两侧电源独立,可实现不同电平域间的逻辑电平隔离)

二、封装与环境适配

  • 封装:SOIC-16-300mil,适合常见的 PCB 加工与波峰/回流焊工艺
  • 工作温度:-40 ℃ ~ +125 ℃(工业级工作温度,适合严苛环境)
  • 应用场景:工业自动化、运动控制、功率逆变器、隔离串口接口、隔离 GPIO、数据采集等需要电气隔离与抗干扰的场合

三、功能与使用要点

  • 通道方向与默认态:SSP5841ED 提供 3 路从 A 侧到 B 侧的正向通道与 1 路从 B 侧到 A 侧的反向通道。器件在无电源或复位时默认输出高电平(fail-safe 高),便于上电/掉电期间维持确定的系统状态,避免总线悬空导致误动作。
  • 双电源独立:VCCA 与 VCCB 可分别选择 2.5 V、3.3 V 或 5 V 逻辑电平,便于在不同逻辑域间做电平匹配与隔离(注意两侧必须分别供电以实现隔离功能)。
  • 时序性能:9 ns 的传播延迟和 150 Mbps 的最大速率使其适合 SPI、UART(高速)、GPIO、脉冲信号以及其他需要低延迟传输的数字接口。

四、布局与可靠性建议

  • 电源旁路:在 VCCA 与 VCCB 各侧的电源引脚附近放置 0.1 μF(陶瓷)低 ESR 旁路电容,并辅以 1 μF~10 μF 的去耦电容以抑制低频噪声;电容应尽量靠近芯片引脚布局,缩短回流路径。
  • 接地与隔离区:在 PCB 上为隔离边界留足够的爬电与气隙距离,遵循系统安全级别要求(根据 6000 Vrms 的绝缘等级,结合实际应用安全标准做间距和绝缘材料选择);避免敏感信号线穿越隔离面,所有穿越隔离的连线应通过器件的信号引脚完成。
  • 共模瞬态抗扰度(CMTI):器件对快速共模瞬态具有 50 kV/μs 的抗干扰能力,若系统存在更高幅值或极短脉冲的干扰,应在系统侧增加 RC 滤波、阻尼网络或共模电感以进一步抑制干扰。
  • 热管理:在持续高速工作与高环境温度时,注意器件周围留有散热路径,合理布局大铜面以利散热。虽为小封装但在高频与重载情况下仍需评估温升。

五、典型应用举例

  • 隔离串口通信:用于 MCU 与电力电子控制器之间的隔离 UART/RS-485 接口,提高系统抗干扰能力并防止地环路。
  • 隔离 SPI 总线:在需要隔离的两个数字域之间传输高速 SPI 信号(注意总线拓扑与时序约束)。
  • 隔离 GPIO/中断回路:将传感器或现场信号隔离至控制域,利用默认高态配置保证上电时态稳定。
  • 电机驱动与逆变器控制:在功率侧与控制侧之间隔离诊断、编码器或控制信号,规避高压侧干扰。

六、选型与注意事项

  • 在选型时确认所需通道方向与数量是否匹配(SSP5841ED 为 3:1 的通道配置);若需要对称双向通道或更多通道,需查看系列中其他型号或并联多颗器件的方案。
  • 确认系统的供电策略:隔离器的两侧必须分别供电,且在设计继电、复位或掉电场景时考虑默认高电平的行为是否符合安全与功能需求。
  • 在高共模瞬态或极端电磁环境下,评估是否需要额外的滤波与保护元件(如 TVS、串联阻抗、差模/共模滤波器等)。

总结:SSP5841ED 以其 150 Mbps 的带宽、9 ns 的低延迟、6000 Vrms 的高隔离等级与 50 kV/μs 的优秀 CMTI,适合各种需要高可靠电气隔离的工业与电力电子系统。正确的 PCB 布局、去耦和干扰抑制措施可确保其在复杂电磁环境下长期稳定运行。

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