WMSIC Electronic Components

Siproin H7550-1 H7550

ModelH7550-1
PackageSOT-89
BrandSIPROIN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Siproin H7550-1
Type
SIPROIN
Minimum package
1000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
50mV@(1mA)
Electronic Component
SIPROIN
Electronic Component
H7550-1
Electronic Component
1
Package
SOT-89
Electronic Component
Linear Regulator(LDO)
Electronic Component
0.3g
Electronic Component
1
Electronic Component
BM0265410159
Operating Temperature
40℃~+85℃@(Ta)
Operating Voltage
15V
Output
Electronic Component
Output Voltage
5V
Output Current
150mA
Output Type
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

H7550-1 产品概述

一、产品简介

H7550-1 是上海矽朋(Siproin)推出的一款固定输出线性稳压器(LDO),为单通道正极输出设计,标准输出电压为 5V。器件工作于 -40℃ 至 +85℃ 环境温度范围,面向低功耗、对噪声与输出纹波有严格要求的便携与工业应用场景。该器件具有极低静态电流与较小的压差特性,适合电池供电或长期待机的系统。

二、主要特点

  • 输出类型:固定(5.0V)
  • 最大输入电压(标称):15V
  • 最大输出电流:150mA
  • 静态电流(Iq):典型 1.5μA(低待机功耗)
  • 低压差:50mV @ 1mA(在低电流条件下表现优异)
  • 输出极性:正极输出
  • 工作环境温度:-40℃ ~ +85℃(Ta)
  • 封装:TO-92-3(直插,便于手工焊接和原型验证)
  • 单通道设计,适合空间与成本受限的应用

三、电气参数(要点)

  • 输出电压:5.0V(固定)
  • 最大输出电流:150mA(持续)——在高负载时需关注功耗与温升
  • 压差示例:50mV @ 1mA(低电流下的低压差)
  • 静态电流:1.5μA(有利于电池寿命延长与待机功耗控制)
    注:更多详细动态特性(如负载调节、线性调节、纹波抑制、最大温升等)请参考原厂完整数据手册。

四、封装与引脚

H7550-1 提供 TO-92-3 直插封装,适合手工焊接与小批量装配。TO-92 型封装便于装入通孔 PCB,并可通过简单的散热措施(如加大焊盘、贴敷散热片)改善热性能。具体引脚排列与标识请以原厂数据手册或器件外观标记为准,使用前务必核对实际封装与引脚定义。

五、应用建议

  • 电池供电设备(传感器节点、遥测终端、便携式设备)
  • 低功耗微控制器供电与参考电源
  • 工业控制、模块化仪表的小功率 5V 轨供电
  • 对噪声敏感的模拟前端或数据采集系统(需结合滤波与布局优化)

六、热与可靠性考虑

由于为线性稳压器,功耗等于 (Vin − Vout) × Iout。在高输入电压或高负载情况下,器件自身功耗会显著上升,导致结温升高。例如:若 Vin=15V、Vout=5V、Iout=150mA,则器件功耗为约 1.5W,这对 TO-92 小封装而言可能超出无额外散热条件下的安全范围。建议:

  • 在高输入差或高负载工况下尽量降低 Vin 或分担功耗(前级降压或选择更大散热能力的封装)。
  • 通过增加 PCB 铜箔面积、使用散热垫或改用散热性能更好的封装来改善热耗散。
  • 在设计阶段计算最大结温并留有安全裕量,必要时做热仿真或实验验证。

七、典型电路与工程注意事项

  • 输入侧建议并联 1μF 以上陶瓷或电解电容以抑制输入源阻抗与高频干扰,输出侧建议使用 1–10μF 低 ESR 电容以保证稳压环路稳定性(准确数值与 ESR 要求以原厂建议为准)。
  • 布局上应将输入电容靠近器件输入脚放置,并尽量缩短接地回路以降低噪声与环路面积。
  • 若系统存在短路或瞬态大电流需求,应在评估过流保护与热关断行为后决定是否采用器件,必要时增加保险丝或限流电路。
  • 在进行批量设计前,建议获取并阅读 H7550-1 的完整数据手册,按原厂推荐条件进行验证与可靠性测试。

总结:H7550-1 以其超低静态电流、固定 5V 输出与小体积 TO-92 封装,适合低功耗与空间受限的应用。但在高输入差和高负载情形下需重视热管理与功耗限制,按原厂资料与工程经验做好电路与散热设计。若需更详细的电气参数或数据手册,我可以协助查找或解析具体规格表。

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