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SEMTECH RCLAMP3324P.TCT RCLAMP3324P
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- SEMTECH RCLAMP3324P.TCT
- Type
- SEMTECH
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- SEMTECH
- Electronic Component
- RCLAMP3324P.TCT
- Electronic Component
- 1
- Package
- DFN2510-10
- Type
- ESD
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.033g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Cj- Capacitor
- 0.65pF
- Electronic Component
- BM0240132128
- Operating Temperature
- 40℃~+125℃
- Voltage
- 4.5V
- Electronic Component
- IEC 61000-4-2；IEC 61000-4-4；IEC 61000-4-5
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
RCLAMP3324P.TCT — SEMTECH 四路 3.3V TVS 二极管 产品概述
一、产品简介
RCLAMP3324P.TCT 是 SEMTECH 推出的四路低电容 TVS（二极管）浪涌/静电放电保护器件，针对 3.3V 工作电压系统设计。器件以 DFN2510-10 小尺寸封装实现多路保护，适用于需要低结电容和高脉冲抑制能力的数据信号线与接口防护。
二、主要电气参数
- 反向稳态电压 (Vrwm)：3.3 V
- 钳位电压：4.5 V
- 峰值脉冲电流 (Ipp)：4.5 A @ 8/20 μs
- 击穿电压 (Vbr)：8 V
- 反向电流 (Ir)：150 nA（典型工况下）
- 结电容 (Cj)：0.65 pF（单通道）
- 通道数：4 路
- 工作温度范围：-40 ℃ ~ +125 ℃
- 通过标准：IEC 61000-4-2（ESD）、IEC 61000-4-4（EFT）、IEC 61000-4-5（浪涌）
三、关键特性与优势
- 低结电容（0.65 pF）对高速数据线影响小，可用于对信号完整性要求高的接口保护。
- 单通道高能量吸收能力（4.5 A@8/20μs），能有效钳位浪涌与冲击电流，保护后端器件。
- 四路集成封装，节省 PCB 面积并简化多通道保护设计。
- 宽工作温度范围和 IEC 抗扰度认证，适合工业与消费类等复杂电磁环境。
四、典型应用场景
- 3.3V 数字接口与信号线保护（如 MCU/FPGA 的 I/O、传感器接口）
- 通讯设备、路由器、接入终端的端口防护
- 工业控制、物联网终端与仪表中的静电与浪涌防护
五、布局与选型建议
- 器件应尽量靠近受保护的接口或连接器放置，缩短引线长度以降低串联感抗和提高响应速度。
- 在高能量通路下，可在地平面处安排锡通/热盲孔以改善能量散热。
- 对高速差分线使用时，注意每路的结电容对阻抗的影响；0.65 pF 属较低值，但在极高频应用仍需验证信号完整性。
- 选型时确认系统最大允许钳位电压，确保 4.5 V 钳位值不会影响被保护器件工作极限。
六、封装与可靠性
DFN2510-10 小型封装利于高密度布局，对制程要求较高，建议参考厂商推荐的回流焊曲线与 PCB 焊盘设计。最终设计前请参阅 SEMTECH 官方详细数据手册以获得完整电气曲线与应用注意事项。
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