WMSIC Electronic Components

SEMTECH UCLAMP0571P.TNT UCLAMP0571P

ModelUCLAMP0571P.TNT
PackageSGP1610-2
BrandSEMTECH
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
SEMTECH UCLAMP0571P.TNT
Type
SEMTECH
Minimum package
10000

Technical parameters

Electronic Component
SEMTECH
Electronic Component
UCLAMP0571P.TNT
Electronic Component
1
Package
SGP1610-2
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.006g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
675pF
Electronic Component
BM0227299399
Operating Temperature
40℃~+125℃
Voltage
15V
Electronic Component
IEC 61000-4-4;IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
10nA
Voltage(VBR)
6V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

UCLAMP0571P.TNT 产品概述

一、主要特点

UCLAMP0571P.TNT 是 Semtech 提供的一款高能量、单路 TVS(瞬态电压抑制器)/ESD 抑制器,专为直流 5 V 工作电压的接口和电源线保护设计。器件在瞬态冲击下能提供大电流吸收能力与低钳位电压,显著降低敏感电路暴露于静电放电(ESD)、电快速瞬变(EFT)和雷击/浪涌脉冲(Surge)的风险。主要特点包括:

  • 额定反向截止电压 Vrwm:5 V(适用于 5 V 供电或信号总线)
  • 钳位电压:15 V(在规定测试条件下实现对受保护节点的有效钳制)
  • 峰值脉冲电流 Ipp:80 A @ 8/20 μs(适用于较强脉冲能量吸收)
  • 峰值脉冲功率 Ppp:1.5 kW @ 8/20 μs
  • 击穿电压(Vbr):6 V(典型击穿起始点)
  • 反向漏电流 Ir:10 nA(低漏电利于待机耗电优化)
  • 结电容 Cj:675 pF(较大电容需在高速信号场合慎用)
  • 单路保护,封装:SGP1610-2,工作结温范围:-40 ℃ ~ +125 ℃(Tj)
  • 符合 IEC 61000-4-2、IEC 61000-4-4、IEC 61000-4-5 等抗扰度等级

二、关键电气参数(概览)

  • 持续工作电压(Vrwm):5 V
  • 击穿起始电压(Vbr):6 V(典型)
  • 钳位电压(在标准脉冲条件下):15 V
  • 峰值脉冲电流(8/20 μs):80 A
  • 峰值脉冲功率(8/20 μs):1500 W
  • 反向漏电流:10 nA(在 Vrwm 条件下)
  • 结电容:675 pF(影响高速信号传输特性)
  • 单路结构,适合一根信号或电源线的点对地保护

以上参数为器件典型或额定指标,具体使用时应参考官方数据手册中的典型曲线与测试条件(例如波形、脉冲重复率、环境温度等)。

三、工作原理与保护行为

UCLAMP0571P.TNT 在正常工作时呈高阻抗状态,对线路影响最小;当受到静电放电或较短时间高能量脉冲时,TVS 二极管在击穿区迅速导通,将瞬态能量引导至地线,从而将被保护节点电压钳制在安全值(典型 15 V)以内,防止下游器件损坏。器件的响应速度快、吸收能量大,适合应对 ESD(瞬态高压)与 8/20 μs 的浪涌脉冲。

四、封装、热与环境特性

  • 封装:SGP1610-2,适合表面贴装(SMT)并可直接装配在连接器附近或线路入口处进行局部保护。
  • 温度范围:-40 ℃ 至 +125 ℃(Tj),适应工业级环境。
  • 由于器件在吸收大能量冲击时会产生热量,实际 PCB 布局与散热路径(接地铜箔、焊盘面积、散热通孔)对可靠性和重复冲击承受能力有重要影响。

五、典型应用场景与选型建议

适用场景:

  • 接口保护:USB(低端口)、UART、I2C、SPI 等 5 V 或接近 5 V 工作电压的接口(注意结电容对高速信号的影响)
  • 电源线输入保护:5 V 电源输入、车载电子低压侧防护(需评估浪涌能量)
  • 工业与消费类电子:带有外部接线或暴露于静电环境的产品边缘接口

选型建议:

  • 若保护高速数据线(例如 USB2.0、差分高速线),需关注 675 pF 的结电容会引入信号失真或阻抗不匹配,建议评估是否采用低电容类型 TVS。
  • 对于 5 V 电源或低速控制信号,UCLAMP0571P.TNT 能提供可靠的浪涌与 ESD 防护。
  • 确认所需的方向性(单向/双向)与器件极性,必要时参照数据手册或向供应商确认。

六、PCB 布局与使用注意事项

  • 将器件尽可能靠近被保护接口或连接器焊盘布置,缩短未保护段的走线长度以降低串联感抗。
  • 提供低阻抗的返回路径:靠近地平面布置、尽量使用多个过孔(VIA)连接至接地平面,减少环路面积。
  • 对于多点保护设计,注意不同保护器件之间的间距与接地分流,避免共模干扰和回路耦合。
  • 在高能脉冲环境下,增加散热铜箔或热通孔有助于提升器件在重复冲击下的可靠性。
  • 由于器件具有较高结电容,敏感高速线路应进行信号完整性仿真或实际测量验证。

七、合规性与可靠性

UCLAMP0571P.TNT 符合 IEC 61000-4-2(ESD)、IEC 61000-4-4(EFT)与 IEC 61000-4-5(浪涌)相关测试项的应用要求,可用于提升产品对静电与短脉冲干扰的抗扰度。器件在厂商规定的热循环和工作温度范围内能够保持稳定的保护性能,但在最终应用中仍建议依据系统级测试验证并预留足够安全裕度。

总结:UCLAMP0571P.TNT 是一款针对 5 V 级别线缆与接口提供强力瞬态抑制的单路 TVS 器件,具备高吸收能量与低漏电特性。适合电源输入与低速信号保护,但在高频、高速信号场合需谨慎评估其较大的结电容对信号完整性的影响。若需进一步的电气曲线、封装尺寸与焊接工艺建议,请参照 Semtech 官方数据手册。

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