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SUPSiC GAQW212G1EH
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- SUPSi C GAQW212G1EH
- Type
- SUPSIC
- Minimum package
- 1000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SUPSIC
- Electronic Component
- GAQW212G1EH
- Electronic Component
- 1
- Package
- SMD-8
- Electronic Component
- Solid State Relay (MOS Output)
- Electronic Component
- 1.166g
- Electronic Component
- 1
- Electronic Component
- BM0226465242
- Resistor
- 270mΩ
- Operating Temperature
- 40℃~+85℃
- Electronic Component
- 2A
- Load Voltage
- 60V
- Type
- AC,DC
- (Pd)
- 500mW
- (Vf)
- 1.2V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
GAQW212G1EH 产品概述
一、产品简介
GAQW212G1EH 是 SUPSiC（国晶微半导体）面向隔离开关应用推出的一款 SMD-8 封装固态隔离开关器件。器件支持 AC/ DC 输入驱动，采用双刀单掷（常开）触点结构，具有高隔离电压与低导通电阻等特点，适合对小功率直流/低频交流负载进行可靠隔离与切换。
二、主要特性
- 隔离电压（Vrms）：5 kV，满足高压隔离要求，适合工业级隔离场合。
- 触点形式：双刀单掷（常开），便于实现双通路同时切断/接通。
- 连续负载电流：1.1 A（DC），负载电压上限 60 V。
- 导通电阻：典型 270 mΩ，低导通损耗。
- 输入特性：正向压降 Vf≈1.2 V，工作电流 If≈7 mA（典型）——兼容 AC / DC 驱动。
- 开关性能：导通时间 Ton≈1.5 ms，关断时间 Toff≈50 μs；关断响应快，导通上升相对缓和。
- 总功耗 Pd：500 mW（封装热限制参考）。
- 工作温度范围：-40 ℃ ～ +85 ℃。
- 封装：SMD-8，适合自动贴装与回流焊工艺。
三、典型电气计算与热管理提示
- 在最大连续电流 1.1 A 下，导通压降约为 I·R ≈ 1.1 A × 0.27 Ω ≈ 0.297 V，耗散功率约 0.36 W（I^2·R ≈ 0.327 W），低于器件总功耗 0.5 W，但接近热极限；建议在高温或长期满载工况下做功率/温度裕度预算并保持良好散热（底层铜箔、散热过孔或靠近散热层布线）。
- 输入侧使用限流电阻或驱动电流源，典型 LED 驱动电流为 7 mA，可根据需要在 5–15 mA 范围内调整以优化开关性能与发热。
四、典型应用场景
- 工业控制隔离开关、继电器替代（低功率执行器和信号回路）。
- 家电与照明控制模块（直流或低频交流负载）。
- 通讯设备与测控仪表中的电路隔离与断电保护。
- 智能表计、安防系统等需高隔离电压与可靠切换的场合。
五、选型与设计注意事项
- 若长期在高环境温度或接近 1.1 A 负载工作，需按器件热阻与PCB散热设计保留裕度，避免在封装允许功耗附近长期运行。
- 对需要快速频繁开关的场合，关注 Ton（≈1.5 ms）和 Toff（≈50 μs）不对称特性，评估是否满足系统响应。
- 保持输入侧与输出侧的爬电距和固体隔离布局以发挥 5 kV 隔离能力，回流焊工艺按供应商建议温度曲线执行。
- 负载电压不得超过 60 V，且考虑浪涌电流及瞬态过压保护（TVS、RC 抑制网络等）。
综上，GAQW212G1EH 以高隔离电压、低导通损耗与 SMD 可贴装封装，为需要绝缘隔离且负载不大的开关场合提供了可靠的半导体解决方案。选择与布局时应重点考虑热管理与开关时间特性，以确保长期可靠运行。
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