WMSIC Electronic Components

SUPSiC GAQW212G2EH

ModelGAQW212G2EH
PackageSMD8
BrandSUPSIC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
SUPSi C GAQW212G2EH
Type
SUPSIC
Minimum package
1000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SUPSIC
Electronic Component
GAQW212G2EH
Electronic Component
1
Package
SMD8
Electronic Component
Solid State Relay (MOS Output)
Electronic Component
0.61g
Electronic Component
1
Electronic Component
BM0229953526
Resistor
68mΩ
Operating Temperature
40℃~+85℃
Electronic Component
2A
Load Voltage
60V
Type
AC,DC
(Pd)
650W
(Vf)
1.2V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

GAQW212G2EH 产品概述

GAQW212G2EH 是 SUPSiC(国晶微半导体)推出的一款 SMD8 封装高隔离固态输出器件,适用于小功率、高可靠性的开关控制场合。器件以低导通电阻、宽输入兼容性和高隔离电压为主要卖点,适合用于工业控制、通信电源、仪器仪表等需要电气隔离和低损耗直流或交流负载开关的应用。

一、主要技术参数速览

  • 触点形式:2A(双刀单掷,常开)
  • 连续负载电流:2 A
  • 负载电压:60 V
  • 输入正向压降(Vf):约 1.2 V(If = 30 mA)
  • 输入正向电流(If):30 mA(典型工作值/驱动参考)
  • 导通电阻(Rds(on)):68 mΩ(输出导通时参考)
  • 隔离电压(Vrms):5 kV
  • 导通时间(Ton):1.5 ms
  • 截止时间(Toff):50 μs
  • 输入类型:AC / DC 兼容
  • 工作温度:-40 ℃ ~ +85 ℃
  • 封装:SMD8
  • 总功耗(Pd):650 W(规格标注,请在实际系统设计中确认散热与应用限制)

二、关键特性与工程含义

  • 低导通电阻(68 mΩ):在额定电流 2 A 下,导通压降约为 0.136 V,导通损耗约为 0.272 W(I^2·R),对系统热预算有利,适合连续导通场合。
  • 高隔离(5 kVrms):输入与输出之间具备较强的电气隔离能力,适用于需要满足安全与信号隔离要求的系统。
  • 输入兼容 AC/DC:支持交流或直流驱动,便于与不同类型的驱动电路配合使用;输入典型正向压降约 1.2 V(If = 30 mA),驱动电流设计请参考此值并留有裕量。
  • 开/关响应特性:导通时间 1.5 ms,关断时间 50 μs,表现为导通较慢、关断较快。对 PWM 或短脉冲控制时需评估最小脉宽与延时特性。
  • 宽工作温度与 SMD8 小型封装:适配工业级环境并利于 SMT 大规模生产与密集布板。

三、典型应用场景

  • 工业控制输出模块、可编程逻辑控制器(PLC)的小电流输出通道
  • 仪器仪表与测试设备中的电气隔离开关
  • 通信设备中的外围负载开关、继电器替代方案
  • 需要长寿命、无机械磨损的固态开关场合

四、设计与使用建议

  • 驱动电流:建议按照 If = 30 mA 作为驱动参考值,并在实际电路中留足余量与限流措施,避免长时间满载导致 LED 寿命或驱动器过热。
  • 热设计:尽管器件导通损耗较低,但需注意 PCB 散热(加大铜箔面积、设置过孔、靠近散热面布局)。规格中的 Pd(650 W)为厂方标注参数,实际应用时请与供应商或数据手册核实热阻与允许功耗条件。
  • 抗浪涌与感性负载:对于感性或存在较大浪涌电流的负载,建议外部并联限流器、浪涌抑制元件(TVS、电阻或 RC 吸收)以保护器件。
  • 开关频率与脉冲:导通时间较长(1.5 ms),不适合高频开关应用;若应用需短脉冲或高频 PWM,请按最小脉宽和平均功率重新评估。
  • PCB 布局:SMD8 封装要求合理的焊盘和热沉布局;输入侧与输出侧应保留必要的爬电距离与焊盘隔离以维持 5 kVrms 隔离性能。

五、可靠性与选型注意事项

  • 温度与降额:在高温工作环境下,应对最大连续电流进行降额设计,确保长期可靠性。
  • 验证测试:在批量使用前建议做系统级的热循环、隔离耐压与长期寿命测试,尤其在涉及安全隔离要求的产品中。
  • 数据手册核对:在最终设计前,请务必参照 SUPSiC 官方数据手册确认所有参数、绝对最大额定值及封装焊盘尺寸。

结论:GAQW212G2EH 以低导通损耗、高隔离电压与 AC/DC 兼容输入为特点,适合用作要求电气隔离且负载较小的固态开关解决方案。在使用时应重视热管理、驱动电流和开关时序特性,以确保器件在系统中的长期稳定性和可靠性。若需更详细的电气特性曲线或封装尺寸,请参阅厂方数据手册或联系 SUPSiC 技术支持。

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