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SUPSiC GAQW212G2E
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- SUPSi C GAQW212G2E
- Type
- SUPSIC
- Minimum package
- 50 袋
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SUPSIC
- Electronic Component
- GAQW212G2E
- Electronic Component
- 1
- Package
- DIP-8
- Electronic Component
- Solid State Relay (MOS Output)
- Electronic Component
- 1.212g
- Electronic Component
- 1
- Electronic Component
- BM0258761866
- Resistor
- 68mΩ
- Operating Temperature
- 40℃~+85℃
- Electronic Component
- 2A
- Load Voltage
- 60V
- Type
- AC,DC
- (Pd)
- 650W
- (Vf)
- 1.2V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
GAQW212G2E 产品概述
一、概述
GAQW212G2E 是 SUPSiC（国晶微半导体）推出的一款高可靠性双刀单掷（常开）器件，封装为 DIP-8，面向小功率开关和隔离控制场景。器件支持 AC 和 DC 输入驱动，具有高隔离电压和快速响应特性，适合对体积、隔离与开关性能有综合要求的应用。
二、主要技术参数
- 触点形式：2A（双刀单掷——常开）
- 连续负载电流：2 A
- 负载电压：60 V（最大）
- 正向压降 (Vf)：1.2 V
- 正向电流 (If)：7 mA（典型驱动电流）
- 导通电阻：68 mΩ
- 隔离电压 (Vrms)：5 kV
- 导通时间 Ton：1.5 ms；截止时间 Toff：50 μs
- 输入类型：AC / DC
- 工作温度：-40 ℃ ~ +85 ℃
- 总功耗 (Pd)：650 W（标称，需按具体散热条件评估）
- 封装：DIP-8
- 品牌：SUPSiC（国晶微半导体）
三、关键特性解析
- 低导通电阻（68 mΩ）和较低正向压降（1.2 V）有利于降低导通损耗，适用于 2 A 级别连续负载。
- 隔离电压高达 5 kVrms，能提供良好的输入—输出电气隔离，适合需要高绝缘等级的控制接口。
- 导通/截止响应特性兼顾了速度与稳定性：Ton 为 1.5 ms（上升相对较慢），Toff 仅 50 μs（关断迅速），在一些需要快速断开但允许较缓启动的场合表现良好。
- 支持 AC 与 DC 输入，若为 LED 驱动式输入，典型驱动电流 7 mA，可直接由常见驱动源驱动。
四、典型应用场景
- 工业控制接口、继电器替代、隔离控制模块
- 小功率电源开关、保护线路、信号路由切换
- 家电控制板、测试设备、通信终端的隔离开关
- 需要高隔离且体积受限的模块化电路
五、封装与可靠性
DIP-8 封装利于手工焊接与线路板插装测试，适合样机验证与小批量生产。器件工作温度范围宽（-40 ℃~+85 ℃），在高温或功率接近极限时需做好散热与热结管理，特别注意总功耗标称值与实际 PCB 散热能力的匹配。
六、使用建议与注意事项
- 不要超过 2 A 连续负载电流与 60 V 负载电压的额定值，考虑浪涌与瞬态保护。
- 总功耗 650 W 为标称值，实际应用中应根据封装、PCB 铜箔和散热片设计进行热仿真与降额使用。
- 对于感性负载建议并联 RC 母线吸收或 TVS 抑制器以限制反向峰值。
- 输入驱动尽量稳定，若为 PWM 或脉冲信号，注意 Ton/Toff 对系统响应的影响。
- 产品选型前建议参考器件完整数据手册与可靠性试验报告，结合实际电路做边界条件验证。
如需该型号的详细电气图、等效电路或在特定系统中的仿真建议，我可以根据您的应用场景提供进一步的设计支持。
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