WMSIC Electronic Components

SUPSiC GC3D10065A

ModelGC3D10065A
PackageTO-220-2
BrandSUPSIC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
SUPSi C GC3D10065A
Type
SUPSIC
Minimum package
1000 卷

Technical parameters

Electronic Component
SUPSIC
Electronic Component
GC3D10065A
Electronic Component
1
Package
TO-220-2
Electronic Component
Diode
Electronic Component
2.714g
Electronic Component
1
Electronic Component
BM0227243418
Current
30A
Diode
1
Current(Ir)
60uA@650V
(Vf)
1.5V
Electronic Component
55℃~+175℃
Electronic Component
Electronic Component
Electronic Component
1000
Voltage Rating(Vr)
650V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

GC3D10065A 产品概述

一、产品简介

GC3D10065A 是 SUPSiC(国晶微半导体)推出的一款碳化硅(SiC)肖特基整流器,采用常见的 TO-220-2 封装,适合需要高效、耐高温和高压能力的电力电子应用。器件的额定直流整流电流为 30A,直流反向耐压 650V,工作结温范围宽达 -55℃ 至 +175℃,适应恶劣环境与高温工况。

二、主要参数与其意义

  • 正向压降 (Vf):1.5V(典型值),较低的 Vf 可显著减少导通损耗,提升系统效率。
  • 非重复峰值浪涌电流 (Ifsm):90A,表明器件具备良好的抗浪涌能力,适合有短时冲击电流的场合。
  • 反向电流 (Ir):60µA @ 650V,在高压下保持较低漏电流,有利于降低空载能耗与散热需求(需注意温度升高时漏电流会增加)。
  • 总电容电荷 (Qc):25nC,较小的电荷量意味着开关过程中的能量损耗和应力较低,利于提高硬开关或软切换拓扑的效率。
  • 工作结温范围:-55℃ ~ +175℃,支持高温工作环境,适用于电机驱动、车载以及工业电力电子系统。

三、关键优势

  • 高温能力:最高结温可达 175℃,在高温环境下可靠性优于传统硅整流器。
  • 低导通与低开关损耗:1.5V 的低 Vf 与 25nC 的低 Qc 结合,既降低导通损耗又减少开关能耗。
  • 高压与抗浪涌:650V 的反向承压与 90A 的浪涌能力,使器件在高压、瞬态冲击场景下表现稳健。
  • 封装与工程适配:TO-220-2 便于安装与散热处理,利于快速替换与样机验证。

四、典型应用场景

  • 开关电源(SMPS)、有源功率因数校正(PFC)电路:用于高频整流与续流,提高转换效率。
  • 太阳能逆变器、风力发电接口:承受高压侧整流与逆变回路的需求。
  • 电动汽车车载充电器(OBC)、逆变与电机控制:适合高效率、高温的汽车电子环境。
  • 不间断电源(UPS)、工业驱动与电源模块:用于降低系统总体能耗与热管理负担。

五、设计与使用建议

  • 散热设计:尽管 TO-220-2 便于散热,仍需配合适当散热片或系统级散热方案,尤其在持续 30A 等高电流工况下。
  • 温度与漏电流管理:注意结温升高会使反向漏电流增加,应在高温工况下对漏电和热稳定性进行评估,并适当降额使用。
  • 浪涌保护:对可能出现的重复浪涌或高能瞬态,建议在系统中加入限流或吸收电路(如软启动、吸收电阻或 TVS)以保护器件寿命。
  • PCB 布局:尽量缩短高电流回路的走线,增大铜箔面积并做好接地,以减少寄生电感与热阻。
  • 兼容性验证:在最终系统中进行电磁兼容(EMC)和热循环测试,确保长期可靠性。

六、注意事项

  • 请以正式器件数据手册为准进行详细电气特性与热参数设计,实际 Vf、Ir 等参数会随测试电流与温度变化。
  • 器件属于功率半导体,装配与焊接过程中应遵循厂家推荐的热工与机械应力限制,避免超出封装或焊接工艺范围。

GC3D10065A 以其 650V/30A 等级、低 Vf、低 Qc 与高温能力,在需要高效、耐高温和高压的电力电子系统中具有明显优势,是替代传统硅肖特基或提高系统性能的理想选择。

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