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SUPSiC GC2M1000170D
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- SUPSi C GC2M1000170D
- Type
- SUPSIC
- Minimum package
- 450 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SUPSIC
- Electronic Component
- GC2M1000170D
- Electronic Component
- 1
- Package
- TO247-3
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 8.04g
- Electronic Component
- 1
- Electronic Component
- BM0227372786
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 69W
- Electronic Component
- Electronic Component
- Electronic Component
- 450
- Voltage(Vdss)
- 1.7kV
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
GC2M1000170D 产品概述
一、主要特性
GC2M1000170D 是 SUPSiC（国晶微半导体）推出的一款 1.7 kV 级 N 沟道碳化硅（SiC）功率 MOSFET，面向高压开关场合。器件具备耐高压、耐高温和低开关损耗的典型 SiC 优势，适合高压、低至中等电流的电力电子应用。
二、关键参数
- 类型：1 个 N 沟道 MOSFET
- 漏源电压 Vdss：1.7 kV
- 连续漏极电流 Id：5 A
- 耗散功率 Pd：69 W
- 导通电阻 RDS(on)：800 mΩ @ Vgs = 20 V
- 阈值电压 Vgs(th)：2.8 V
- 栅极电荷 Qg：22 nC
- 输入电容 Ciss：215 pF
- 输出电容 Coss：19 pF
- 反向传输电容 Crss：2.2 pF
- 工作温度范围：-55 ℃ ～ +150 ℃
- 封装：TO-247-3
三、性能解读
- 高压能力：1.7 kV 的耐压等级适合中高压变换、逆变与整流等场合。
- 开关性能：较小的 Coss（19 pF）和中等的 Qg（22 nC）使得器件在高压下具有较低的开关能量损耗，同时对驱动功率要求适中。以 20 V 驱动为例，单次栅极充放电能量约 0.5·Qg·Vg ≈ 220 nJ，100 kHz 时栅极驱动功率仅约 22 mW。
- 导通损耗：RDS(on) = 0.8 Ω 表明器件更适合高压低电流应用；若按 5 A 连续电流计算，导通损耗约为 I^2·R ≈ 20 W，需重视散热设计。
四、应用场景
适用于高压电源、高压逆变器、光伏并网、高压直流输电（HVDC）前端、工业电源以及要求高耐压与高温运行的场合。由于 RDS(on) 较大，更适合以开关为主、峰值电流或脉冲应用而非长期大电流低压通流场景。
五、使用建议与注意事项
- 驱动：建议采用 15–20 V 的栅极驱动电压以获得足够栅压富余，注意选用带抗振荡的栅阻并做好 PCB 布局，控制寄生电感。
- 抗 dv/dt 与过冲：高压切换时可能产生较大 dv/dt，建议在必要时加阻尼、电阻-电容吸收或缓冲电路保护栅极与器件本体。
- 散热：TO-247-3 封装需配合合适散热器或强制风冷，确保结温在器件额定范围内，避免长期在高结温下运行。
- 选型考量：如需更低导通损耗或更高电流，建议评估并行/替代器件或选择更低 RDS(on) 的型号。
GC2M1000170D 在高压、宽温和可靠性要求较高的电力电子系统中具有明显优势，适合工程师在高压开关拓扑中作为高耐压、可控开关元件选用。
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