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SUPSiC GC2M0160120D
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- SUPSi C GC2M0160120D
- Type
- SUPSIC
- Minimum package
- 450 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SUPSIC
- Electronic Component
- GC2M0160120D
- Electronic Component
- 1
- Package
- TO-247-3
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 8.757g
- Electronic Component
- 1
- Electronic Component
- BM0227372891
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 125W
- Electronic Component
- Electronic Component
- Electronic Component
- 450
- Voltage(Vdss)
- 1.2kV
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
GC2M0160120D 产品概述
一、产品简介
GC2M0160120D 是 SUPSiC（国晶微半导体）推出的一款 1.2kV 级 N 沟道碳化硅（SiC）MOSFET，封装为 TO-247-3。器件典型参数：Vdss=1.2kV，持续漏极电流 Id=18A，导通电阻 RDS(on)=160mΩ（Vgs=20V），总栅极电荷 Qg=40nC，输入电容 Ciss=606pF，反向传输电容 Crss=5pF，输出电容 Coss=58pF，耗散功率 Pd=125W，阈值电压 Vgs(th)=2.9V，工作温度范围 -55℃～+150℃。
二、主要特性
- 高耐压：1.2kV 额定，适合高压功率转换场景。
- 快速开关：Crss 极小（5pF），降低 Miller 影响，有利于高速切换与降低开关损耗。
- 中等驱动需求：Qg=40nC，配合合理驱动器可实现平衡的开关速度与电磁兼容。
- 宽温域与高功耗承受：工作至 150℃，Pd=125W（注意需配良好散热）。
- TO-247-3 封装，便于散热和可靠安装。
三、电气与热特性要点
- 为在高压下保证可靠开通，建议驱动电压接近 20V；阈值 Vgs(th)=2.9V 表明器件需充分驱动才能达到标称 RDS(on)。
- 较低的 Coss（58pF）和极小 Crss 有助于减少开关能量损耗，但 Ciss=606pF 与 Qg=40nC 表明对驱动器峰值电流有一定要求。
- 标称 Pd=125W 依赖外部散热条件；TO-247-3 需配套散热片或冷却方案以维持热稳定与寿命。
四、驱动与版图建议
- 使用能输出足够电流的专用栅极驱动器，峰值电流以应对 40nC 的充放电需求；推荐驱动电压 15–20V。
- 采用短、粗的栅极回路，栅极引线与驱动电容尽量靠近，布线以降低寄生电感。
- 在高 dv/dt 场合加串联栅阻或 RC 阻尼来控制振铃与 EMI；必要时加入能量回收或吸收电路（RCD、SNUBBER）。
- 注意 PCB 间距与爬电距离设计，满足 1.2kV 绝缘要求。
五、典型应用
- 中高压逆变器、太阳能并网变流器、储能逆变与整流模块、PFC 前端、高压开关电源、工业电机驱动、固态断路器与电力电子变换器等。
六、封装与可靠性提示
TO-247-3 封装便于散热器固定与大电流连接，安装时保证良好热接触与扭矩控制。高压应用须注意绝缘、屏蔽与热循环可靠性，建议进行实际开关损耗、热阻及 EMI 测试与验证，以确保整机长期稳定运行。
如需进一步的典型开关波形、热阻数据或与驱动器匹配建议，可提供具体应用场景以便给出更精确的工程实施方案。
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