WMSIC Electronic Components

SUPSiC GC4D20120A

ModelGC4D20120A
PackageTO-220-2
BrandSUPSIC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
SUPSi C GC4D20120A
Type
SUPSIC
Minimum package
50 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SUPSIC
Electronic Component
GC4D20120A
Electronic Component
1
Package
TO-220-2
Electronic Component
Diode
Electronic Component
2.723g
Electronic Component
1
Electronic Component
BM0258761869
Current
54.5A
Diode
1
Current(Ir)
200uA@1200V
(Vf)
1.5V
Electronic Component
55℃~+175℃
Electronic Component
Electronic Component
Electronic Component
50

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

GC4D20120A 产品概述

一、产品简介

GC4D20120A 是 SUPSiC(国晶微半导体)推出的一款高压碳化硅(SiC)肖特基二极管,封装为 TO-220-2。器件面向中高功率电源与变换器场景,兼顾高耐压、低正向压降与高浪涌能力,适合用于要求高效率、高频率和高温工作的电力电子系统。

二、主要参数

  • 整流电流(IF):54.5 A(额定直流电流)
  • 正向压降(Vf):典型 1.5 V(条件依温度与电流而异)
  • 直流反向耐压(VR):1200 V
  • 反向漏电流(IR):200 μA @ 1200 V
  • 非重复峰值浪涌电流(Ifsm):130 A
  • 工作结温范围:-55 ℃ ~ +175 ℃
  • 封装:TO-220-2
  • 品牌:SUPSiC(国晶微半导体)

三、主要特点

  • 高耐压低漏流:1200 V 等级满足中高压转换要求,1200 V 时反向漏电流仅 200 μA,适合高压直流链路。
  • 低正向压降:约 1.5 V 的低压降降低导通损耗,提高系统效率,尤其在大电流工况有明显优势。
  • 高浪涌能力:130 A 的峰值浪涌电流利于应对启动或短时过载情形。
  • 宽温度工作范围:最高结温可达 175 ℃,提高系统耐热裕量,适合严苛环境。
  • SiC 器件固有优势:无显著反向恢复(reverse-recovery)损耗,适合高开关频率设计。

四、典型应用

  • 开关电源(SMPS)与有源功率因数校正(PFC)电路
  • 光伏逆变器与太阳能并网设备
  • 电动汽车车载充电器(OBC)与电源模块
  • 逆变器、马达驱动及工业电源系统
  • 高压直流(HVDC)辅助电路与充放电设备

五、封装与热管理

TO-220-2 封装便于散热和安装。建议在实际应用中配合合适的散热器或导热垫使用,并注意背面与散热基板的良好热接触。由于器件允许较高结温,仍应通过热阻分析(根据系统散热能力)保证长期可靠运行,避免长期在高结温下工作以延长寿命。

六、设计与使用注意事项

  • 在高电压与高频切换点注意抑制过电压和振荡,必要时增加适当的 RC 抑制或缓冲网络。
  • 考虑器件的热阻与布局,确保热流路径短且导热良好。
  • 反向漏流会随温度升高增加,长期高温下需评估静态功耗与热平衡。
  • 峰值浪涌仅为短时能力,设计中应保证持续工作电流不会超过额定整流电流。

七、可靠性与检验建议

推荐进行温升测试、寿命加速老化和电气应力试验以验证在目标应用下的稳定性。按照系统标准做短路、浪涌及热循环测试,可有效评估长期可靠性。

八、总结

GC4D20120A 以 1200 V 耐压、低正向压降和较高电流能力为核心优势,适用于对效率和体积有较高要求的中高压电源与变换器场景。正确的散热设计与电磁兼容治理能充分发挥其在高频、高温环境下的性能优势。若需更详细的电气特性曲线或热阻参数,建议参考厂家规格书或直接联系 SUPSiC 获取完整资料。

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